Infineon Technologies_CY14B104LA-ZS20XIT
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Infineon Technologies
CY14B104LA-ZS20XIT

774-CY14B104LA-ZS20XIT
PDF Datasheet
IC NVSRAM 4MBIT PAR 44TSOP II
11 Weeks

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ISO9001
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ISO45001
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Tech Specifications

EU RoHS
Compliant
ECCN (US)
3A991b.2.b.
Part Status
Active
HTS
8542.32.00.41
Automotive
No
PPAP
No
NVRAM Type
NVSRAM
Chip Density (bit)
4M
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CY14B104LA-ZS20XIT Description

CY14B104LA-ZS20XIT Description

The CY14B104LA-ZS20XIT is a high-performance Non-Volatile Static Random Access Memory (NVSRAM) IC designed by Infineon Technologies. This 4Mbit memory device is organized as 512K x 8, offering robust data storage and retrieval capabilities. It features a parallel memory interface, ensuring fast and efficient data transfer. The CY14B104LA-ZS20XIT operates within a supply voltage range of 2.7V to 3.6V, making it suitable for a variety of power-sensitive applications. With an access time of 20 ns and a write cycle time of 20 ns, this NVSRAM provides rapid data access and write operations, crucial for real-time systems.

The CY14B104LA-ZS20XIT is packaged in a 44-pin TSOP II format, suitable for surface mount technology (SMT), which enhances its integration into compact and high-density PCB designs. The device is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental and safety standards. It is also classified under HTSUS code 8542.32.0041 and has a moisture sensitivity level (MSL) of 3, allowing for a 168-hour exposure before assembly.

CY14B104LA-ZS20XIT Features

  • Memory Organization: 512K x 8, providing a total memory size of 4Mbit.
  • Access Time: 20 ns, ensuring rapid data retrieval.
  • Write Cycle Time: 20 ns, facilitating quick write operations.
  • Voltage Range: 2.7V to 3.6V, offering flexibility in power supply requirements.
  • Package Type: 44-pin TSOP II, ideal for surface mount applications.
  • Environmental Compliance: REACH unaffected and RoHS3 compliant, ensuring safety and sustainability.
  • Moisture Sensitivity Level: MSL 3 (168 hours), suitable for standard manufacturing processes.
  • Memory Interface: Parallel, enabling efficient data transfer.
  • Non-Volatile Storage: Retains data even when power is lost, crucial for reliable data storage.

CY14B104LA-ZS20XIT Applications

The CY14B104LA-ZS20XIT is well-suited for applications requiring high-speed, non-volatile data storage. Its fast access and write times make it ideal for real-time systems where data integrity and quick retrieval are paramount. Specific use cases include:

  • Industrial Control Systems: For storing critical configuration data and parameters.
  • Telecommunications: In base stations and network equipment for storing firmware and configuration data.
  • Medical Devices: For storing patient data and device configurations.
  • Automotive Electronics: For storing essential vehicle settings and diagnostic data.
  • Consumer Electronics: In devices requiring reliable data storage, such as smart meters and home automation systems.

Conclusion of CY14B104LA-ZS20XIT

The CY14B104LA-ZS20XIT from Infineon Technologies is a versatile and reliable NVSRAM IC, offering a balance of high-speed performance and non-volatile data storage. Its 512K x 8 memory organization and 20 ns access/write times make it an excellent choice for applications requiring rapid data handling. The device's compliance with environmental standards and its robust packaging ensure it is suitable for a wide range of industrial and consumer applications. With its surface mount compatibility and industry-standard TSOP II package, the CY14B104LA-ZS20XIT is an ideal solution for designers looking to integrate reliable, high-speed memory into their systems.

FAQ

What is the standard lead time for CY14B104LA-ZS20XIT?
The standard lead time for CY14B104LA-ZS20XIT is 11 Weeks.
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What voltage specification is listed for CY14B104LA-ZS20XIT?
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