Infineon Technologies Tariff Inquiry

CY14B104N-ZS25XI

CY14B104N-ZS25XI Description

The CY14B104N-ZS25XI is a high-performance Non-Volatile Static Random Access Memory (NVSRAM) IC designed by Infineon Technologies. This 4Mbit memory device is organized as 256K x 16 and features a parallel memory interface, providing fast and reliable data access. The CY14B104N-ZS25XI operates within a supply voltage range of 2.7V to 3.6V and offers an access time of 25 ns, ensuring rapid data. retrieval The write cycle time for both word and page operations is also 25 ns, making it suitable for applications requiring quick data updates.

The device is packaged in a 44-pin TSOP II format, which is ideal for surface-mount applications. It is housed in a tube package, facilitating easy handling and integration into various electronic systems. The CY14B104N-ZS25XI is classified under the ECCN code 3A991B2A and is compliant with REACH and ROHS3 standards, ensuring environmental safety and regulatory adherence. The moisture sensitivity level (MSL) is rated at level 3, allowing for a 168-hour exposure before assembly.

CY14B104N-ZS25XI Features

• High-Speed Performance: With an access time of 25 ns and a write cycle time of 25 ns, the CY14B104N-ZS25XI ensures rapid data access and update capabilities, making it suitable for high-speed applications.
• Non-Volatile Memory: The NVSRAM format allows the device to retain data even when power is lost, providing a reliable storage solution for critical data.
• Wide Voltage Range: The device operates within a supply voltage range of 2.7V to 3.6V, offering flexibility in power supply requirements.
• Surface-Mount Compatibility: The 44-pin TSOP II package is designed for surface-mount technology, enabling efficient integration into modern electronic systems.
• Regulatory Compliance: The CY14B104N-ZS25XI is REACH unaffected and ROHS3 compliant, ensuring it meets environmental and regulatory standards.
• Moisture Sensitivity Level: MSL level 3 (168 hours) provides a balance between moisture protection and ease of handling during assembly processes.

CY14B104N-ZS25XI Applications

The CY14B104N-ZS25XI is ideal for a variety of applications where high-speed, non-volatile memory is required. Some specific use cases include:

• Industrial Control Systems: For storing critical configuration data and parameters that need to be retained even in the event of power loss.
• Telecommunications: In base stations and network equipment where quick data access and reliability are essential.
• Automotive Electronics: For storing firmware and critical data in automotive control units, ensuring data integrity during power cycles.
• Medical Devices: In diagnostic equipment and monitoring systems where data retention and quick access are crucial for patient care.

Conclusion of CY14B104N-ZS25XI

The CY14B104N-ZS25XI is a robust and reliable NVSRAM IC that offers high-speed data access and non-volatile storage capabilities. Its wide voltage range, surface-mount compatibility, and regulatory compliance make it a versatile choice for a variety of applications. While the product is now obsolete, it remains a testament to Infineon Technologies' commitment to delivering high-performance memory solutions. For applications requiring fast and reliable data storage, the CY14B104N-ZS25XI is an excellent choice, providing the necessary features and performance benefits to meet demanding industry requirements.