
Infineon Technologies
CY14E116L-ZS25XI
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
CY14E116L-ZS25XI Description
CY14E116L-ZS25XI Description
The CY14E116L-ZS25XI is a high-performance Non-Volatile Static Random Access Memory (NVSRAM) IC designed by Infineon Technologies. This memory IC chip features a 16 Mbit memory size organized in a 2M x 8 configuration, offering robust data storage and retrieval capabilities. The CY14E116L-ZS25XI operates with a parallel memory interface, ensuring fast and efficient data transfer rates. It is designed for surface mount applications, making it ideal for compact and high-density electronic designs.
CY14E116L-ZS25XI Features
- Memory Size and Organization: The CY14E116L-ZS25XI provides a substantial 16 Mbit memory capacity, organized in a 2M x 8 format. This configuration allows for efficient storage and access of data, making it suitable for applications requiring large amounts of non-volatile memory.
- Access and Write Cycle Time: With an access time of 25 ns and a write cycle time of 25 ns, the CY14E116L-ZS25XI ensures rapid data processing and storage. This high-speed performance is critical for real-time applications where quick data retrieval and writing are essential.
- Voltage Range: The IC operates within a supply voltage range of 4.5V to 5.5V, providing flexibility in power supply requirements and ensuring compatibility with various electronic systems.
- Compliance and Standards: The CY14E116L-ZS25XI is REACH unaffected and ROHS3 compliant, adhering to stringent environmental and safety standards. This compliance ensures that the product is suitable for global markets and meets regulatory requirements.
- Packaging and Mounting: The CY14E116L-ZS25XI is available in a 44TSOP II package, which is ideal for surface mount technology (SMT). This packaging option allows for high-density board layouts and is suitable for automated assembly processes.
- Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the CY14E116L-ZS25XI is designed to withstand environmental conditions during manufacturing and storage, reducing the risk of moisture-related failures.
CY14E116L-ZS25XI Applications
The CY14E116L-ZS25XI is well-suited for a variety of applications that require reliable non-volatile memory solutions. Some specific use cases include:
- Industrial Automation: The high-speed and non-volatile nature of the CY14E116L-ZS25XI make it ideal for industrial control systems, where data integrity and quick access are crucial for maintaining operational efficiency.
- Telecommunications: In telecommunication equipment, the CY14E116L-ZS25XI can be used for storing configuration data, logs, and other critical information that needs to be retained even in the event of power loss.
- Embedded Systems: The compact size and surface mount compatibility of the CY14E116L-ZS25XI make it a suitable choice for embedded systems in consumer electronics, automotive, and IoT devices.
- Data Logging: The NVSRAM technology ensures that data is preserved across power cycles, making the CY14E116L-ZS25XI an excellent choice for data logging applications where continuous data recording is required.
Conclusion of CY14E116L-ZS25XI
The CY14E116L-ZS25XI from Infineon Technologies is a versatile and high-performance NVSRAM IC that offers significant advantages over similar models. Its 16 Mbit memory capacity, fast access and write times, and compatibility with surface mount technology make it an ideal solution for a wide range of applications. The product's compliance with environmental and safety standards ensures its suitability for global markets. Whether used in industrial automation, telecommunications, or embedded systems, the CY14E116L-ZS25XI provides reliable and efficient non-volatile memory storage, making it a valuable component in modern electronic designs.



.png)

















.png?x-oss-process=image/format,webp/resize,h_32)










