Infineon Technologies_CY15B102N-ZS60XM
Infineon Technologies_CY15B102N-ZS60XM
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Infineon Technologies
CY15B102N-ZS60XM

774-CY15B102N-ZS60XM
PDF Datasheet
IC FRAM 2MBIT PARALLEL 44TSOP II
8 Weeks

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Tech Specifications

Organization
128Kx16
HTS
8542.32.00.71
ECCN (US)
3A001.a.2.c
Memory Type
Non-Volatile
Product Status
Active
Supplier Device Package
44-TSOP II
Access Time
90 ns
Package / Case
44-TSOP (0.400", 10.16mm Width)
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CY15B102N-ZS60XM Description

CY15B102N-ZS60XM Description

The CY15B102N-ZS60XM is a high-performance Ferroelectric RAM (FRAM) memory IC chip designed by Infineon Technologies. This automotive-grade memory device offers a robust and reliable solution for applications requiring fast access times and non-volatile storage. The CY15B102N-ZS60XM features a parallel memory interface and is housed in a 44-pin TSOP II package, making it suitable for surface mount applications. It operates within a supply voltage range of 2V to 3.6V and has an access time of 90 nanoseconds, ensuring rapid data retrieval. With a memory organization of 128K x 16, the CY15B102N-ZS60XM provides a total memory size of 2 Mbit, making it ideal for applications that require significant data storage capacity.

CY15B102N-ZS60XM Features

  • Technology: Utilizes Ferroelectric RAM (FRAM) technology, which combines the speed of RAM with the non-volatile nature of flash memory, ensuring data retention without power.
  • Access Time: Achieves an access time of 90 nanoseconds, providing rapid data read and write capabilities.
  • Write Cycle Time: The write cycle time is also 90 nanoseconds, ensuring consistent performance for both reading and writing operations.
  • Memory Organization: The 128K x 16 memory organization allows for efficient data storage and retrieval, with a total memory size of 2 Mbit.
  • Voltage Range: Operates within a supply voltage range of 2V to 3.6V, offering flexibility in power supply requirements.
  • Automotive Grade: Certified for automotive applications, ensuring reliability and durability in demanding environments.
  • Compliance: The CY15B102N-ZS60XM is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards.
  • Moisture Sensitivity Level: Rated at MSL 3 (168 hours), ensuring the device remains unaffected by moisture during storage and handling.
  • Packaging: Supplied in a tray package, facilitating easy handling and integration into various manufacturing processes.

CY15B102N-ZS60XM Applications

The CY15B102N-ZS60XM is ideal for applications that require high-speed, non-volatile memory solutions. Its automotive-grade certification makes it particularly suitable for automotive systems, such as engine control units, advanced driver-assistance systems (ADAS), and infotainment systems. The fast access and write times ensure that critical data can be quickly stored and retrieved, enhancing the overall performance of these systems. Additionally, the device's robustness and compliance with environmental standards make it a reliable choice for industrial control systems, medical devices, and other high-reliability applications.

Conclusion of CY15B102N-ZS60XM

The CY15B102N-ZS60XM from Infineon Technologies stands out as a superior choice for applications requiring fast, non-volatile memory solutions. Its FRAM technology, combined with a 90 nanosecond access time and automotive-grade reliability, makes it an ideal component for demanding environments. The device's compliance with environmental and safety standards further enhances its appeal. Whether used in automotive, industrial, or medical applications, the CY15B102N-ZS60XM offers a reliable and high-performance memory solution that ensures data integrity and system efficiency.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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