Infineon Technologies_CY7C1021CV33-12ZSXE
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Infineon Technologies
CY7C1021CV33-12ZSXE

774-CY7C1021CV33-12ZSXE
PDF Datasheet
IC SRAM 1MBIT PARALLEL 44TSOP II
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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

EU RoHS
Compliant
ECCN (US)
3A991b.2.b.
Part Status
Obsolete
HTS
CY7C1021CV33-12ZSXE
Automotive
Yes
PPAP
Unknown
Chip Density (bit)
1M
Number of Words
64K
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CY7C1021CV33-12ZSXE Description

CY7C1021CV33-12ZSXE Description

The CY7C1021CV33-12ZSXE is a high-performance Static Random Access Memory (SRAM) IC designed by Infineon Technologies. This 1Mbit memory device is organized as 64K x 16, offering parallel memory interface capabilities. It is housed in a 44-pin TSOP II package, making it suitable for surface-mount applications. The CY7C1021CV33-12ZSXE operates within a supply voltage range of 3V to 3.6V and features an access time of 12 nanoseconds, ensuring rapid data retrieval. The write cycle time is also optimized at 12ns, making it highly efficient for demanding applications. This SRAM IC is classified under ECCN 3A991B2B and HTSUS 8542.32.0041, and it is REACH unaffected and ROHS3 compliant, adhering to stringent environmental and safety standards. Despite its obsolete status, the CY7C1021CV33-12ZSXE remains a reliable choice for legacy systems and specific applications requiring its unique capabilities.

CY7C1021CV33-12ZSXE Features

  • Memory Organization: 64K x 16, providing a total memory size of 1Mbit.
  • Access Time: 12 nanoseconds, ensuring fast data access and retrieval.
  • Write Cycle Time: 12ns, facilitating efficient data writing operations.
  • Memory Interface: Parallel, suitable for systems requiring direct memory access.
  • Mounting Type: Surface Mount, ideal for compact and space-efficient designs.
  • Voltage Range: 3V to 3.6V, offering flexibility in power supply requirements.
  • Package Type: 44-pin TSOP II, providing robust mechanical and electrical characteristics.
  • Environmental Compliance: REACH unaffected and ROHS3 compliant, ensuring safety and sustainability.
  • Moisture Sensitivity Level (MSL): Level 3 (168 Hours), suitable for standard manufacturing processes.

CY7C1021CV33-12ZSXE Applications

The CY7C1021CV33-12ZSXE is well-suited for a variety of applications that demand high-speed, volatile memory solutions. Its fast access and write cycle times make it ideal for:

  • Embedded Systems: Providing temporary storage for critical data in embedded devices.
  • Networking Equipment: Enhancing the performance of routers, switches, and other networking hardware.
  • Industrial Control Systems: Ensuring reliable and rapid data access in industrial automation and control applications.
  • Telecommunications: Supporting high-speed data processing in communication infrastructure.
  • Consumer Electronics: Enhancing the performance of devices requiring fast memory access, such as digital cameras and gaming consoles.

Conclusion of CY7C1021CV33-12ZSXE

The CY7C1021CV33-12ZSXE is a versatile and efficient SRAM IC that offers significant performance benefits for applications requiring high-speed data access and write operations. Despite its obsolete status, its robust technical specifications and compliance with industry standards make it a reliable choice for legacy systems and specific applications where its unique capabilities are essential. With its fast access and write cycle times, parallel memory interface, and surface-mount package, the CY7C1021CV33-12ZSXE continues to be a valuable component in the electronics industry.

FAQ

What voltage specification is listed for CY7C1021CV33-12ZSXE?
The listed voltage-related specification for CY7C1021CV33-12ZSXE is 2.97.
Is CY7C1021CV33-12ZSXE currently in stock?
What is CY7C1021CV33-12ZSXE?
What package or case is CY7C1021CV33-12ZSXE available in?
Are there related or alternative parts for CY7C1021CV33-12ZSXE?
Availability (In Stock : 716 )
Quantity Unit Price Ext. Price
1+ $5.29760 $5.30
10+ $4.93328 $49.33
25+ $4.78509 $119.63
50+ $4.67280 $233.64
100+ $4.56060 $456.06
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