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CY7C1061GE18-15BVJXIT
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CY7C1061GE18-15BVJXIT Description
CY7C1061GE18-15BVJXIT Description
The CY7C1061GE18-15BVJXIT is a high-performance Static Random Access Memory (SRAM) IC designed by Infineon Technologies. This memory device is organized as 1M x 16, offering a total memory size of 16 Mbit. It features a parallel memory interface, enabling efficient data transfer and communication with other system components. The CY7C1061GE18-15BVJXIT operates within a supply voltage range of 1.65V to 2.2V, making it suitable for low-power applications while maintaining robust performance.
The device is housed in a 48-pin Very Fine Pitch Ball Grid Array (VFBGA) package, which is ideal for surface mount applications. This packaging ensures high reliability and compatibility with modern printed circuit board (PCB) designs. The CY7C1061GE18-15BVJXIT has an access time of 15 nanoseconds and a write cycle time of 15 nanoseconds, providing rapid data read and write capabilities. These characteristics make it suitable for applications requiring high-speed data processing and storage.
CY7C1061GE18-15BVJXIT Features
- Memory Organization: 1M x 16, offering a total memory size of 16 Mbit.
- Memory Interface: Parallel, ensuring efficient data transfer.
- Access Time: 15 ns, providing rapid data retrieval.
- Write Cycle Time: 15 ns, ensuring swift data writing.
- Supply Voltage: 1.65V to 2.2V, suitable for low-power applications.
- Package Type: 48VFBGA, ideal for surface mount applications.
- Mounting Type: Surface Mount, compatible with modern PCB designs.
- Memory Type: Volatile SRAM, offering fast read and write speeds.
- Moisture Sensitivity Level (MSL): Level 3 (168 Hours), ensuring reliability in various environmental conditions.
- Compliance: REACH Unaffected and ROHS3 Compliant, meeting environmental and safety standards.
- ECCN: 3A991B2A, classified for international trade compliance.
- HTSUS: 8542.32.0041, classified for customs purposes.
CY7C1061GE18-15BVJXIT Applications
The CY7C1061GE18-15BVJXIT is well-suited for a variety of applications that require high-speed, low-power memory solutions. Some specific use cases include:
- Embedded Systems: Ideal for microcontroller-based systems that require fast access to memory for real-time processing.
- Networking Equipment: Suitable for routers, switches, and other networking devices that need rapid data storage and retrieval.
- Industrial Automation: Applicable in control systems and programmable logic controllers (PLCs) where quick response times are critical.
- Telecommunications: Used in base stations and other telecom equipment for temporary data storage and fast data access.
- Consumer Electronics: Appropriate for high-speed consumer devices such as gaming consoles, digital cameras, and smart TVs.
Conclusion of CY7C1061GE18-15BVJXIT
The CY7C1061GE18-15BVJXIT from Infineon Technologies is a versatile and high-performance SRAM IC that offers significant advantages in terms of speed, power efficiency, and reliability. Its 15 ns access and write cycle times ensure rapid data processing, making it ideal for applications that demand quick response times. The device's low supply voltage range and surface mount packaging further enhance its suitability for modern, low-power electronic designs.
The CY7C1061GE18-15BVJXIT's compliance with REACH and ROHS3 standards ensures that it meets environmental and safety regulations, making it a responsible choice for manufacturers. Its broad range of applications, from embedded systems to industrial automation, highlights its adaptability and value in the electronics industry. Overall, the CY7C1061GE18-15BVJXIT is a reliable and efficient memory solution that stands out in its category.



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