Infineon Technologies
CY7C136E-25JXIT

774-CY7C136E-25JXIT
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IC SRAM 16KBIT PARALLEL 52PLCC

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
EAR99
Memory Organization
2K x 8
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
52-PLCC (19.13x19.13)
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CY7C136E-25JXIT Description

CY7C136E-25JXIT Description

The CY7C136E-25JXIT is a 16Kbit SRAM memory IC designed for high-speed, low-power applications. Manufactured by Infineon Technologies, this chip features a parallel memory interface and a memory organization of 2K x 8, providing a total memory size of 16Kbit. It operates within a supply voltage range of 4.5V to 5.5V and offers an access time of 25 nanoseconds, ensuring fast data retrieval. The CY7C136E-25JXIT is packaged in a 52-lead plastic leaded chip carrier (PLCC) and is suitable for surface mount applications. This memory IC is classified under ECCN EAR99 and HTSUS 8542.32.0041, and it is REACH unaffected and ROHS3 compliant, adhering to stringent environmental and safety standards.

CY7C136E-25JXIT Features

  • Memory Type: Volatile SRAM, ensuring data is retained only while power is supplied, which is ideal for applications requiring frequent data updates.
  • Access Time: 25 ns, providing rapid data access and enhancing overall system performance.
  • Write Cycle Time: 25 ns for both word and page writes, ensuring efficient data handling.
  • Memory Organization: 2K x 8, offering a balanced trade-off between address space and data width.
  • Supply Voltage: 4.5V to 5.5V, providing flexibility in power supply design.
  • Package: 52PLCC, a robust and widely-used package type suitable for surface mount technology (SMT).
  • Moisture Sensitivity Level (MSL): Level 3 (168 Hours), indicating good resistance to moisture, crucial for reliability in various environmental conditions.
  • Compliance: REACH unaffected and ROHS3 compliant, ensuring environmental safety and regulatory adherence.

CY7C136E-25JXIT Applications

The CY7C136E-25JXIT is well-suited for applications requiring fast, reliable, and low-power memory solutions. Its 25 ns access time and 25 ns write cycle time make it ideal for high-speed data processing and storage tasks. The 2K x 8 memory organization provides a balanced address and data width, making it suitable for a variety of embedded systems and microcontroller applications. Its surface mount package and robust moisture sensitivity level ensure it can be reliably integrated into compact and ruggedized designs.

Specific use cases include:

  • Embedded Systems: Ideal for microcontroller-based systems requiring fast, temporary data storage.
  • Telecommunications: Suitable for buffering and temporary storage in communication devices.
  • Industrial Control: Useful in industrial automation systems where rapid data access and reliability are critical.
  • Consumer Electronics: Applicable in devices requiring fast memory access for improved user experience.

Conclusion of CY7C136E-25JXIT

The CY7C136E-25JXIT is a high-performance SRAM memory IC that stands out due to its fast access and write times, balanced memory organization, and robust packaging. Its compliance with environmental and safety standards ensures it meets the demands of modern electronics manufacturing. While the product is marked as obsolete, its technical specifications and performance benefits make it a reliable choice for applications requiring fast, volatile memory solutions.

FAQ

What voltage specification is listed for CY7C136E-25JXIT?
The listed voltage-related specification for CY7C136E-25JXIT is 4.5V ~ 5.5V.
What operating temperature range does CY7C136E-25JXIT support?
Is CY7C136E-25JXIT currently in stock?
What is CY7C136E-25JXIT?
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