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CY7C1412KV18-300BZC

CY7C1412KV18-300BZC Description

The CY7C1412KV18-300BZC is a high-performance Static Random Access Memory (SRAM) integrated circuit designed by Infineon Technologies. This 36Mbit memory device is organized as 2M x 18, offering a parallel memory interface and a clock frequency of 300 MHz. It operates within a supply voltage range of 1.7V to 1.9V and is suitable for applications requiring fast data access and high reliability.

The CY7C1412KV18-300BZC is housed in a surface-mount 165FBGA package, making it ideal for space-constrained designs. It is designed to operate within an ambient temperature range of 0°C to 70°C, ensuring robust performance in various environmental conditions. The memory is volatile, meaning it retains data only while power is applied, which is beneficial for applications requiring frequent data updates.

CY7C1412KV18-300BZC Features

• High-Speed Performance: With a clock frequency of 300 MHz, the CY7C1412KV18-300BZC offers rapid data access, making it suitable for high-speed processing applications.
• Parallel Memory Interface: The parallel interface allows for efficient data transfer, enhancing overall system performance.
• Wide Operating Voltage Range: The device operates within a voltage range of 1.7V to 1.9V, providing flexibility in power supply design.
• Robust Temperature Range: The operating temperature range of 0°C to 70°C ensures reliable performance in a variety of environments.
• Surface-Mount Packaging: The 165FBGA package is ideal for surface-mount technology, facilitating compact and reliable PCB designs.
• Moisture Sensitivity Level: MSL 3 (168 Hours) ensures the device is protected against moisture during manufacturing and storage processes.
• Compliance: The CY7C1412KV18-300BZC is REACH unaffected and complies with the ECCN 3A991B2A and HTSUS 8542.32.0041 regulations.

CY7C1412KV18-300BZC Applications

The CY7C1412KV18-300BZC is ideal for applications requiring high-speed, volatile memory solutions. Its high clock frequency and parallel interface make it suitable for:

• Telecommunications: High-speed data buffering and temporary storage in communication systems.
• Networking: Use in routers and switches for fast data processing and temporary data storage.
• Industrial Automation: Real-time data processing and control systems requiring rapid access to memory.
• Consumer Electronics: High-speed data storage in devices such as gaming consoles and digital cameras.
• Military and Aerospace: Applications requiring high reliability and fast data access in harsh environments.

Conclusion of CY7C1412KV18-300BZC

The CY7C1412KV18-300BZC from Infineon Technologies is a versatile and high-performance SRAM IC designed to meet the demands of modern electronic systems. Its 300 MHz clock frequency, parallel memory interface, and wide operating voltage range make it an excellent choice for applications requiring fast data access and high reliability. The surface-mount 165FBGA package ensures it can be easily integrated into compact designs, while its robust temperature range and moisture sensitivity level provide reliability in various operating conditions. Although the product is now obsolete, it remains a benchmark for high-speed, volatile memory solutions in the electronics industry.