Infineon Technologies_FF1000R17IE4S2BOSA1
Infineon Technologies_FF1000R17IE4S2BOSA1
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Infineon Technologies
FF1000R17IE4S2BOSA1

297-FF1000R17IE4S2BOSA1
PDF Datasheet
Trans IGBT Module N-CH 1700V 1.39KA 6250W

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Tech Specifications

Maximum Operating Temperature (°C)
150
Maximum Gate Emitter Leakage Current (uA)
0.4
Configuration
Dual
Maximum Continuous Collector Current (A)
1390
HTS
EA
Typical Collector Emitter Saturation Voltage (V)
2
Maximum Collector-Emitter Voltage (V)
1700
Channel Type
N
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FF1000R17IE4S2BOSA1 Description

Trans IGBT Module N-CH 1700V 1.39KA 6250W

FAQ

What is FF1000R17IE4S2BOSA1?
FF1000R17IE4S2BOSA1 is a IGBT Modules from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does FF1000R17IE4S2BOSA1 support?
What voltage specification is listed for FF1000R17IE4S2BOSA1?
Is FF1000R17IE4S2BOSA1 currently in stock?
Are there related or alternative parts for FF1000R17IE4S2BOSA1?
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