Infineon Technologies_FM24V10-GTR
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Infineon Technologies
FM24V10-GTR

774-FM24V10-GTR
PDF Datasheet
IC FRAM 1MBIT I2C 3.4MHZ 8SOIC
8 Weeks

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Tech Specifications

EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8542.32.00.71
SVHC
Yes
Automotive
No
PPAP
No
Chip Density (bit)
1M
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FM24V10-GTR Description

Infineon Technologies | F-RAM (Ferroelectric RAM)

FM24V10-GTR

1Mbit (128K x 8) I²C F-RAM | Infinite Endurance | NoDelay™ Writes | Industrial Grade

✔️ Industrial Temp: -40°C to +85°C ⚡ 1MHz I²C / No Write Delay
BRAND
Infineon
F-RAM Series (ex‑Cypress)
1Mbit
Density (128KB)
I²C
Interface
1MHz
Max Clock
2.0-3.6V
Supply Range
SOIC8
Package

Product Overview

The Infineon (formerly Cypress) FM24V10-GTR is a 1Mbit (131,072 x 8) Ferroelectric RAM (F-RAM) memory device that combines the non‑volatility of Flash with the high‑speed, low‑power, and unlimited endurance of SRAM. Unlike EEPROM or Flash, F‑RAM performs write operations at bus speed with zero write delay (NoDelay™), eliminating the need for polling or write cycle timing. The device operates over a wide voltage range of 2.0V to 3.6V and supports an I²C bus interface up to 1 MHz (Fast‑Plus mode).

Housed in a standard 8‑pin SOIC (150mil) package (GTR suffix for tape & reel), the FM24V10-GTR operates over the industrial temperature range of -40°C to +85°C. With 10¹⁴ (100 trillion) read/write cycles and 151‑year data retention, it is ideal for applications requiring frequent data logging, real‑time parameter storage, and high‑reliability non‑volatile memory – such as industrial control, medical devices, metering, and automotive black boxes.

📊 Technical Specifications

Density / Organization 1Mbit (131,072 x 8 bits) — 128KB
Memory Interface 2-wire I²C serial bus (SDA, SCL)
Clock Frequency 1 MHz (max) — Fast‑Plus mode
Write Cycle Time 0 (NoDelay™ — writes occur at I²C bus speed)
Read/Write Endurance 10¹⁴ (100 trillion) cycles — effectively unlimited
Data Retention 151 years @ 85°C (minimum)
Supply Voltage (Vcc) 2.0V – 3.6V
Operating Temperature Industrial: -40°C to +85°C
Storage Temperature -55°C to +125°C
Package Type 8‑pin SOIC (150mil, JEDEC MS-012) — “GTR” = green, tape & reel
Package Dimensions 4.9 x 3.9 x 1.5 mm (approx)
Active Read Current 550 µA (typical @ 1MHz)
Standby Current 5 µA (typical @ 25°C, Vcc=3.6V)
Write Protection Hardware WP pin (protects entire array)
Device Addressing Up to 2 devices on same bus (A0 pin selectable)
RoHS / Halogen Free Yes — “G” suffix indicates green, lead‑free
Moisture Sensitivity Level MSL 3 (168 hours)
Part Status Active — In full production

✨ Key Features

  • NoDelay™ Writes – Zero write cycle time, no polling or software delays
  • Infinite Endurance – 10¹⁴ read/write cycles eliminates wear‑leveling concerns
  • 151‑Year Data Retention at 85°C, exceeding standard EEPROM/Flash
  • Fast 1MHz I²C Interface – Up to 128 KB/s write throughput, same as read
  • Low Power Operation – 5µA standby, ideal for battery‑backed systems
  • Wide Voltage Range – 2.0V to 3.6V, compatible with 2.5V and 3.3V rails
  • Industrial Temperature – -40°C to +85°C for harsh environments
  • Hardware Write Protection – WP pin prevents accidental writes to full array
  • Sub‑100ns Access Time – Faster than any serial EEPROM
  • Standard SOIC8 Package – Drop‑in replacement for I²C EEPROMs (24Cxx, 24LCxx) but with no write delays
  • AEC‑Q100 Grade 3 qualified option available (contact Infineon)
  • Long‑term Availability – Infineon’s commitment to industrial embedded markets
🎯 Target Applications:
Real‑time data logging (smart meters, event recorders), industrial PLCs, medical implants and monitors, automotive telematics, battery management systems, gaming machines, and high‑reliability configuration storage.

⚡ The F-RAM Advantage vs EEPROM/Flash

Write Speed
F-RAM: 1MHz (no delay)
EEPROM: 5ms write cycle → >5000x slower
Endurance
F-RAM: 10¹⁴ cycles (unlimited)
EEPROM: 1 million cycles → 100Mx lower
Data Retention
F-RAM: 151 years @ 85°C
Flash: 10‑20 years @ 55°C

With FM24V10, you can write to any address at bus speed without worrying about write cycle limitations or page boundaries. It combines the simplicity of SRAM with non‑volatility, making it the ideal choice for frequent data capture and real‑time parameter updates.

🧠 I²C Interface & Addressing

The FM24V10 uses a two‑wire I²C interface with a fixed slave address 1010 (binary). The A0 pin selects between two device addresses (hardwired to VSS or VDD). The device supports sequential reads and writes with automatic address increment within the 128KB memory array.

🔌 Pin Configuration (SOIC8)
1: A0 (address select) | 2: NC | 3: NC | 4: VSS | 5: SDA | 6: SCL | 7: WP | 8: VCC
Note: Pins 2 and 3 are no‑connect; for compatibility with 24Cxx devices, they are often left floating.

📦 Ordering Information & Part Number Decoder

Orderable Part Number Temperature Package Description
FM24V10-GTR -40°C to +85°C SOIC8 (150mil) Industrial, tape & reel (3000 pcs/reel)
FM24V10-G (Tube) -40°C to +85°C SOIC8 (150mil) Tube packaging (95 pcs/tube)
FM24V10-DGTR -40°C to +85°C TSSOP8 Ultra‑compact, tape & reel
FM24V10A-GTR -40°C to +105°C SOIC8 Automotive Grade 2 (AEC‑Q100)
🔍 Part Number Breakdown (FM24V10-GTR):
FM24 – Infineon (Cypress) F-RAM family, I²C interface
V10 – Density: 1Mbit (V10 = 1M, V05 = 512K, etc.)
G – Green package (RoHS, lead‑free, halogen‑free)
TR – Tape & Reel packaging

🏆 Infineon Technologies – Leader in F-RAM

Infineon Technologies (through its acquisition of Cypress Semiconductor) is the world’s leading supplier of Ferroelectric RAM (F-RAM) memory. F‑RAM combines the best of non‑volatile memory with SRAM speed and unlimited endurance, enabling new classes of high‑performance data logging and energy‑efficient designs.

  • Pioneer in F-RAM technology – Over 20 years of production experience
  • AEC‑Q100 qualified automotive F-RAM family
  • ISO 9001, IATF 16949 certified manufacturing
  • 100+ million F‑RAM units shipped worldwide
  • Densities from 4Kbit to 16Mbit – SPI and I²C interfaces available
🌟 Why Choose FM24V10-GTR?
• Zero write delay – no lost cycles
• 100 trillion cycle endurance
• 151‑year data retention @ 85°C
• Drop‑in upgrade for EEPROM (no software changes required)
• Backed by Infineon’s quality and long‑term supply

🛠️ Development Tools & Support

📄 Datasheet & App Notes
Full specification, F-RAM design guidelines, and migration notes from EEPROM.
💻 Software Drivers
Example I²C code for Linux, Arduino, and STM32 (including no‑wait write loops).
🔌 Programmer Support
Supported by all major programmers (Elnec, Xeltek, Segger).

Infineon offers free samples, evaluation boards (FM24V10-EVAL), and direct FAE support. For industrial and automotive design assistance, contact your local Infineon sales office.

📄 Certifications & Compliance

  • RoHS 2011/65/EU (Compliant)
  • REACH SVHC (Compliant)
  • Halogen‑free per IEC 61249-2-21
  • Conflict Minerals (CFSI) report available
  • AEC‑Q100 Grade 3/2 options available

📦 Packaging & Logistics

  • Tape & Reel: 3000 pcs per 13" reel (SOIC8)
  • Tube: 95 pcs per tube
  • Moisture Sensitivity Level: MSL 3
  • Lead finish: NiPdAu (green, lead‑free)
  • Lead time: 8‑10 weeks ARO, stock via distributors

 

FAQ

What are the key specifications of the FM24V10-GTR?
The FM24V10-GTR is a 1‑Megabit (128K x 8) non‑volatile memory using ferroelectric (F‑RAM) technology. It offers a 3.4 MHz I²C serial interface with a 130 ns access time and features NoDelay™ writes, meaning writes occur at bus speed without any added write delay.
What is the operating voltage and temperature range?
What are the endurance and data retention capabilities?
What is the part status and what are the packaging options?
Availability (In Stock : 6265 )
Quantity Unit Price Ext. Price
10+ $6.42685 $64.27
30+ $5.28857 $158.66
100+ $4.76228 $476.23
500+ $4.52057 $2260.29
1000+ $4.41085 $4410.85
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