Infineon Technologies_IDB06S60C
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Infineon Technologies
IDB06S60C

280-IDB06S60C
PDF Datasheet
DIODE SIL CARB 600V 6A TO263-3-2

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Tech Specifications

Speed
No Recovery Time > 500mA (Io)
Capacitance @ Vr, F
280pF @ 1V, 1MHz
Reverse Recovery Time (trr)
0 ns
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Obsolete
Supplier Device Package
PG-TO263-3-2
Current - Reverse Leakage @ Vr
80 µA @ 600 V
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IDB06S60C Description

IDB06S60C Description

The IDB06S60C is a high-performance SiC (Silicon Carbide) Schottky diode developed by Infineon Technologies. It belongs to the CoolSiC™+ series and is designed for high-efficiency power conversion applications. With its advanced technology, the IDB06S60C offers superior performance, reliability, and efficiency compared to traditional silicon-based diodes.

IDB06S60C Features

  • Speed: The IDB06S60C has a no recovery time greater than 500mA (Io), ensuring fast switching and minimal power loss.
  • Capacitance: It features a low capacitance of 280pF @ 1V, 1MHz, which contributes to its high-speed performance.
  • Reverse Recovery Time: The IDB06S60C boasts a reverse recovery time (trr) of 0 ns, minimizing switching losses and improving efficiency.
  • Voltage - Forward (Vf): The maximum forward voltage (Vf) at 6 A is 1.7 V, resulting in low conduction losses.
  • Voltage - DC Reverse (Vr): It can withstand a maximum reverse voltage of 600 V, making it suitable for high-voltage applications.
  • Current - Average Rectified (Io): The IDB06S60C can handle an average rectified current of 6 A, providing robust performance in demanding applications.
  • Mounting Type: The diode is surface mount, making it suitable for compact and space-constrained designs.
  • Package: It comes in a tape & reel (TR) packaging, facilitating automated assembly and reducing handling costs.

IDB06S60C Applications

The IDB06S60C is ideal for a variety of high-efficiency power conversion applications, including:

  1. Power Supplies: Its low forward voltage drop and fast switching capabilities make it suitable for high-efficiency power supply designs.
  2. Renewable Energy: The IDB06S60C can be used in solar inverters and wind power converters, where high efficiency and reliability are crucial.
  3. Electric Vehicles (EVs): Its high voltage and current ratings make it suitable for use in EV charging systems and power electronics.
  4. Industrial Automation: The IDB06S60C can be used in motor drives and power electronics for industrial automation systems, where high efficiency and reliability are essential.

Conclusion of IDB06S60C

The IDB06S60C is a high-performance SiC Schottky diode that offers superior performance, efficiency, and reliability compared to traditional silicon-based diodes. Its unique features, such as a no recovery time greater than 500mA (Io), low capacitance, and 0 ns reverse recovery time, make it an ideal choice for high-efficiency power conversion applications. While the IDB06S60C is currently classified as obsolete, it remains a valuable option for legacy systems and applications where its advanced performance characteristics are required.

FAQ

What is the mounting type of IDB06S60C?
IDB06S60C uses a Surface Mount mounting style based on the listed product specifications.
What voltage specification is listed for IDB06S60C?
What package or case is IDB06S60C available in?
Is IDB06S60C currently in stock?
What operating temperature range does IDB06S60C support?
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