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IKD10N60R

IKD10N60R Description

The IKD10N60R is a high-performance single IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, designed for high-power applications. This device features a Trench IGBT structure, offering superior switching performance and reliability. With a maximum collector-emitter breakdown voltage of 600V, it can handle high voltages while maintaining low conduction losses. The IKD10N60R is designed for surface mount applications, making it suitable for compact and efficient power electronics designs.

IKD10N60R Features

• Technical Specifications:

  • Reverse Recovery Time (trr): 62 ns
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Td (on/off) @ 25°C: 14ns/192ns
  • Switching Energy: 590µJ
  • Current - Collector (Ic) (Max): 20 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Gate Charge: 64 nC
  • Power - Max: 150 W
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected

• Performance Benefits:

  • Low switching energy and fast switching times contribute to high efficiency in power conversion applications.
  • The Trench IGBT structure provides excellent thermal performance and robustness.
  • The unlimited moisture sensitivity level ensures reliable operation in various environmental conditions.

• Unique Features and Advantages:

  • The IKD10N60R's TrenchStop® technology offers superior short-circuit capability and ruggedness, making it ideal for demanding applications.
  • The device's low on-state voltage drop (Vce(on)) contributes to high efficiency and reduced power losses.

IKD10N60R Applications

The IKD10N60R is well-suited for a variety of high-power applications, including:

• Power Supplies: Its high voltage and current ratings make it ideal for power supply designs, particularly in industrial and automotive applications.
• Motor Control: The IKD10N60R's fast switching capabilities and low conduction losses are beneficial in motor control applications, such as electric vehicles and industrial drives.
• Renewable Energy: The device's high power rating and robustness make it suitable for solar inverters and wind power converters.

Conclusion of IKD10N60R

The IKD10N60R is a high-performance, single IGBT from Infineon Technologies, offering superior switching performance, reliability, and efficiency. Its unique Trench IGBT structure and TrenchStop® technology provide excellent short-circuit capability and thermal performance, making it ideal for demanding high-power applications. With its wide range of technical specifications and performance benefits, the IKD10N60R is a versatile solution for power electronics designers looking to optimize their systems' performance and reliability.