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IMW120R090M1HXKSA1

IMW120R090M1HXKSA1 Description

The IMW120R090M1HXKSA1 is a high-performance 1200V, 26A Silicon Carbide (SiC) N-channel MOSFET from Infineon Technologies' CoolSiC™ series. Designed for demanding power electronics applications, it leverages SiCFET technology to deliver superior efficiency, thermal performance, and switching characteristics compared to traditional silicon-based MOSFETs. With a low Rds(on) of 117mΩ (max) at 8.5A, 18V, and a gate charge (Qg) of 21nC, this device minimizes conduction and switching losses, making it ideal for high-frequency, high-power designs. Packaged in a TO-247-3 through-hole format, it supports a maximum power dissipation of 115W (Tc) and operates reliably under harsh conditions.

IMW120R090M1HXKSA1 Features

• Advanced SiC Technology: Enables higher breakdown voltage (1200V), lower switching losses, and superior thermal conductivity.
• Low Gate Charge (21nC @ 18V): Reduces drive requirements and improves high-frequency performance.
• Optimized Rds(on): 117mΩ (max) ensures minimal conduction losses at high currents.
• Robust Thermal Performance: 115W (Tc) power dissipation capability for high-temperature operation.
• Wide Drive Voltage Range: 15V–18V for flexible gate driving.
• Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL Not Applicable for reliability in industrial environments.

IMW120R090M1HXKSA1 Applications

This MOSFET excels in applications requiring high efficiency and reliability, such as:

• Electric Vehicle (EV) Charging Systems: Fast switching and high voltage tolerance.
• Solar Inverters: Improved efficiency in DC-AC conversion.
• Industrial Power Supplies: High-density designs with reduced thermal stress.
• UPS Systems: Enhanced performance in backup power solutions.
• Motor Drives: Precision control with minimal losses.

Conclusion of IMW120R090M1HXKSA1

The IMW120R090M1HXKSA1 stands out as a premium SiC MOSFET for high-power applications, combining Infineon's CoolSiC™ technology with industry-leading specifications. Its low Rds(on), fast switching, and thermal robustness make it a top choice for engineers designing next-generation power electronics. Whether in EV infrastructure, renewable energy, or industrial systems, this device delivers unmatched performance and reliability.