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IPA50R190CE

IPA50R190CE Description

The IPA50R190CE is a high-performance N-Channel MOSFET from Infineon Technologies. It is part of the CoolMOS™ series and is designed for applications requiring high efficiency and low power dissipation. The device features a maximum drain-to-source voltage (Vdss) of 500V and can handle a continuous drain current (Id) of 18.5A at 25°C. The maximum power dissipation is rated at 32W, making it suitable for a wide range of power electronics applications.

IPA50R190CE Features

• High Input Capacitance (Ciss): The IPA50R190CE has a maximum input capacitance of 1137 pF at 100V, which allows for fast switching and reduced input charging losses.
• Low Gate Charge (Qg): With a maximum gate charge of 47.2 nC at 10V, the device minimizes power consumption during switching, improving overall efficiency.
• Low Rds On: The maximum Rds On of 190 mOhm at 6.2A and 13V ensures low conduction losses and high efficiency in power conversion applications.
• High Vgs(th): The maximum threshold voltage of 3.5V at 510µA provides robust operation and improved noise immunity.
• Through Hole Mounting: The device is packaged in a TO220-FP through-hole package, making it suitable for applications where surface-mount devices are not feasible.
• REACH Unaffected: The IPA50R190CE is not affected by the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulations, ensuring compliance with environmental standards.

IPA50R190CE Applications

The IPA50R190CE is ideal for a variety of power electronics applications, including:

• Switching Power Supplies: The high Vdss and low Rds On make it suitable for high-efficiency power conversion in switch-mode power supplies (SMPS).
• Motor Drives: The device's high current handling capability and low Rds On make it suitable for motor control applications, such as electric vehicles and industrial motor drives.
• Battery Chargers: The IPA50R190CE can be used in battery charging circuits, providing efficient power conversion and low power dissipation.
• Industrial Control: The device's robust performance and low Rds On make it suitable for use in industrial control systems, such as motor drives and power distribution.

Conclusion of IPA50R190CE

The IPA50R190CE is a high-performance N-Channel MOSFET from Infineon Technologies that offers a combination of high efficiency, low power dissipation, and robust performance. Its unique features, such as high input capacitance, low gate charge, and low Rds On, make it an ideal choice for a wide range of power electronics applications, including switching power supplies, motor drives, battery chargers, and industrial control systems. Despite being an obsolete product, the IPA50R190CE remains a reliable and efficient solution for demanding power electronics applications.