Infineon Technologies_IPA50R800CE
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Infineon Technologies
IPA50R800CE

278-IPA50R800CE
PDF Datasheet
MOSFET N-CH 500V 5A TO220-FP
15 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
12.4 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
PG-TO220-FP
Drain to Source Voltage (Vdss)
500 V
Power Dissipation (Max)
26.4W (Tc)
Package / Case
TO-220-3 Full Pack
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IPA50R800CE Description

IPA50R800CE Description

The IPA50R800CE is a high-performance MOSFET (Metal Oxide) from Infineon Technologies, designed to deliver exceptional performance in a variety of electronic applications. With a drain to source voltage (Vdss) of 500V and a continuous drain current (Id) of 5A at 25°C, this N-CH device is well-suited for high-voltage, high-current applications. The IPA50R800CE features a low on-resistance (Rds On) of 800mOhm at 1.5A and 13V, ensuring efficient power dissipation and minimal energy loss.

IPA50R800CE Features

  • Low On-Resistance: The IPA50R800CE boasts an ultra-low Rds On of 800mOhm at 1.5A and 13V, providing high efficiency and minimal power loss in high-current applications.
  • High Drain-to-Source Voltage: With a Vdss of 500V, this MOSFET is capable of handling high-voltage applications, making it ideal for power electronics and motor control systems.
  • Low Gate Charge: The IPA50R800CE has a maximum gate charge (Qg) of 12.4nC at 10V, enabling fast switching and reduced power consumption in high-speed applications.
  • CoolMOS™ Technology: This advanced technology offers improved thermal performance, reduced switching losses, and higher efficiency compared to traditional MOSFETs.
  • Through-Hole Mounting: The IPA50R800CE is available in a TO220-FP package, providing a reliable and robust solution for through-hole applications.

IPA50R800CE Applications

The IPA50R800CE is an ideal choice for a wide range of applications, including:

  1. Power Electronics: Due to its high voltage and current ratings, this MOSFET is well-suited for power conversion and regulation in various electronic systems.
  2. Motor Control: The low on-resistance and high voltage capabilities make the IPA50R800CE an excellent choice for motor drive applications, providing efficient power delivery and control.
  3. Automotive Electronics: This MOSFET can be used in various automotive applications, such as electric power steering, air conditioning systems, and battery management.
  4. Industrial Control Systems: The IPA50R800CE's high performance and reliability make it suitable for use in industrial control systems, including robotics and automation equipment.

Conclusion of IPA50R800CE

The IPA50R800CE is a high-performance MOSFET from Infineon Technologies, offering exceptional technical specifications and performance benefits. Its low on-resistance, high voltage capabilities, and CoolMOS™ technology make it an ideal choice for a wide range of applications, including power electronics, motor control, automotive electronics, and industrial control systems. While the IPA50R800CE is currently classified as obsolete, its unique features and advantages still make it a valuable option for designers looking for a high-performance MOSFET solution.

FAQ

What operating temperature range does IPA50R800CE support?
IPA50R800CE has an operating temperature range of -40°C ~ 150°C (TJ).
What is the standard lead time for IPA50R800CE?
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