Infineon Technologies_IPB04N03LA G
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Infineon Technologies
IPB04N03LA G

285-IPB04N03LA G
PDF Datasheet
MOSFET N-CH 25V 80A TO-263

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Tech Specifications

Status
Obsolete(EOL)
Max Gate Charge
32nC @ 5V
Continuous Drain Current at 25°C
80A (Tc)
Dimension
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Max Input Capacitance
3877pF @ 15V
Gate-Source Threshold Voltage
2V @ 60μA
Mounting
SMD (SMT)
Power Dissipation (Max)
107W (Tc)
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IPB04N03LA G Description

Reel - TR provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The RF FETs, MOSFETs that the IPB04N03LA G belongs to can be classified under the Discrete Semiconductors. IPB04N03LA G is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. IPB04N03LA G provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Infineon Technologies plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Infineon Technologies is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Infineon Technologies builds trust with consumers and enhances the overall reputation of their products.

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