Infineon Technologies

IPB100N04S4-H2

IPB100N04S4-H2 Description

The IPB100N04S4-H2 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. Built using advanced OptiMOS-T2 technology, it delivers exceptional efficiency with a low Rds(on) of 2.1 mΩ and a continuous drain current rating of 100 A at 40 V drain-source breakdown voltage (Vds). The device operates in enhancement mode, ensuring reliable switching performance with fast rise (13 ns) and fall times (21 ns), making it ideal for high-frequency applications. Its compact D2PAK-2 (TO-263-2) SMD package (10 mm × 9.25 mm × 4.4 mm) offers excellent thermal dissipation, supporting a maximum power dissipation of 115 W and operating temperatures up to +175°C.

IPB100N04S4-H2 Features

• Ultra-Low Rds(on): 2.1 mΩ minimizes conduction losses, improving energy efficiency.
• High Current Handling: 100 A continuous drain current for robust power delivery.
• Fast Switching: 18 ns turn-on delay and 19 ns turn-off delay enhance performance in PWM applications.
• Low Gate Charge (Qg): 90 nC reduces drive losses, optimizing high-frequency operation.
• Thermally Efficient: D2PAK-2 package with superior heat dissipation for high-power designs.
• RoHS Compliant (By Exemption): Meets environmental standards while maintaining performance.

IPB100N04S4-H2 Applications

This MOSFET excels in applications requiring high efficiency and reliability, including:

• DC-DC Converters: Ideal for synchronous rectification in buck/boost topologies.
• Motor Control: Provides low-loss switching in automotive and industrial motor drives.
• Power Supplies: Suitable for server, telecom, and industrial SMPS designs.
• Battery Management Systems (BMS): Efficient power switching in EV/HEV and energy storage systems.
• Load Switches: High-current handling for hot-swap and OR-ing applications.

Conclusion of IPB100N04S4-H2

The IPB100N04S4-H2 combines Infineon’s OptiMOS-T2 technology with industry-leading performance metrics, offering superior efficiency, thermal management, and switching speed. Its low Rds(on) and high current capability make it a standout choice for power electronics designers seeking reliability in high-stress environments. Whether used in automotive, industrial, or computing applications, this MOSFET delivers optimal performance while minimizing energy losses.