Infineon Technologies
IPC100N04S51R7ATMA1

278-IPC100N04S51R7ATMA1
PDF Datasheet
MOSFET N-CH 40V 100A 8TDSON-34
18 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
4810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
83 nC @ 10 V
Product Status
Not For New Designs
Supplier Device Package
PG-TDSON-8-34
Drain to Source Voltage (Vdss)
40 V
Power Dissipation (Max)
115W (Tc)
Package / Case
8-PowerTDFN
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IPC100N04S51R7ATMA1 Description

IPC100N04S51R7ATMA1 Description

The IPC100N04S51R7ATMA1 is a high-performance N-Channel MOSFET designed by Infineon Technologies. It offers a unique combination of high current handling capabilities, low on-resistance, and excellent switching characteristics. This MOSFET is part of the OptiMOS™ series, known for its superior performance in power management applications.

IPC100N04S51R7ATMA1 Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical isolation and high input impedance.
  • Drain to Source Voltage (Vdss): 40 V - Suitable for applications requiring high voltage handling.
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc) - Capable of handling high current loads.
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V - Offers low on-resistance for efficient power management.
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V - Minimizes switching losses and improves efficiency.
  • Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V - Reduces parasitic effects and improves high-frequency performance.
  • Vgs (Max): ±20V - Allows for a wide range of gate voltages.
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V - Ensures reliable operation over a broad voltage range.
  • Mounting Type: Surface Mount - Facilitates easy integration into surface-mount technology (SMT) processes.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for use in a wide range of environmental conditions.
  • REACH Status: REACH Unaffected - Compliant with European Union regulations on the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH).
  • RoHS Status: ROHS3 Compliant - Meets the European Union's Restriction of Hazardous Substances (RoHS) directive.

IPC100N04S51R7ATMA1 Applications

The IPC100N04S51R7ATMA1 is ideal for a variety of high-power applications, including:

  • Power Management: Due to its high current handling and low on-resistance, it is suitable for power conversion and management in consumer electronics, industrial equipment, and automotive systems.
  • Motor Control: Its high voltage and current ratings make it an excellent choice for motor control applications, such as electric vehicles and industrial automation.
  • High-Frequency Switching: The low gate charge and input capacitance make it suitable for high-frequency switching applications, such as power supplies and inverters.

Conclusion of IPC100N04S51R7ATMA1

The IPC100N04S51R7ATMA1 is a powerful and versatile MOSFET that offers a combination of high performance and reliability. Its unique features, such as low on-resistance, high current handling, and excellent switching characteristics, make it an ideal choice for a wide range of power management and high-frequency applications. Despite being marked as "Not For New Designs," it remains a valuable component for existing designs that require its specific performance characteristics.

FAQ

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