Infineon Technologies_IPC100N04S5L1R9ATMA1
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Infineon Technologies
IPC100N04S5L1R9ATMA1

278-IPC100N04S5L1R9ATMA1
PDF Datasheet
MOSFET N-CH 40V 100A 8TDSON-34
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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
29
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
4310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 10 V
Typical Rise Time (ns)
5
PPAP
Unknown
Channel Mode
Enhancement
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IPC100N04S5L1R9ATMA1 Description

IPC100N04S5L1R9ATMA1 Description

IPC100N04S5L1R9ATMA1 is a high-performance N-channel MOSFET designed and manufactured by Infineon Technologies. This device is part of the OptiMOS™ series, known for its excellent electrical characteristics and reliability. With a drain-source voltage rating of 40V and a continuous drain current of 100A at 25°C, it is suitable for a wide range of applications requiring high power and efficiency.

IPC100N04S5L1R9ATMA1 Features

  • Technology: MOSFET (Metal Oxide), offering superior performance and reliability.
  • Input Capacitance (Ciss): Maximum 4310 pF at 25V, ensuring fast switching and low power consumption.
  • Gate Charge (Qg): Maximum 81 nC at 10V, reducing switching losses and improving efficiency.
  • Drain to Source Voltage (Vdss): 40V, suitable for high-voltage applications.
  • Power Dissipation (Max): 100W (Tc), allowing for high power operation.
  • Rds On (Max): 1.9mOhm at 50A, 10V, providing low on-resistance and high efficiency.
  • Vgs (Max): ±16V, offering flexibility in gate voltage requirements.
  • Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On), ensuring easy drive and control.
  • Mounting Type: Surface Mount, ideal for space-constrained applications.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring robustness in various environmental conditions.
  • REACH Status: REACH Unaffected, complying with environmental regulations.
  • RoHS Status: ROHS3 Compliant, adhering to.

IPC100N04S5L1R9ATMA1 Applications

The IPC100N04S5L1R9ATMA1 is ideal for applications requiring high power and efficiency, such as:

  • Power Electronics: In power supplies, converters, and inverters where high voltage and current ratings are essential.
  • Industrial Automation: For motor drives and control systems that demand high power and reliability.
  • Automotive Electronics: In electric vehicle components, such as battery management systems and powertrain control units.
  • Telecommunications: For high-power amplifiers and signal processing circuits in base stations and network equipment.

Conclusion of IPC100N04S5L1R9ATMA1

The IPC100N04S5L1R9ATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, offering excellent electrical characteristics, reliability, and flexibility. Its unique features, such as low on-resistance, high input capacitance, and compliance with environmental regulations, make it an ideal choice for high-power applications in various industries. Despite being marked as "Not For New Designs," it remains a robust solution for existing designs and applications that require its specific performance capabilities.

FAQ

What voltage specification is listed for IPC100N04S5L1R9ATMA1?
The listed voltage-related specification for IPC100N04S5L1R9ATMA1 is 40 V.
What is the mounting type of IPC100N04S5L1R9ATMA1?
What is IPC100N04S5L1R9ATMA1?
What package or case is IPC100N04S5L1R9ATMA1 available in?
Are there related or alternative parts for IPC100N04S5L1R9ATMA1?
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