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IPC100N04S5L1R9ATMA1
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IPC100N04S5L1R9ATMA1 Description
IPC100N04S5L1R9ATMA1 Description
IPC100N04S5L1R9ATMA1 is a high-performance N-channel MOSFET designed and manufactured by Infineon Technologies. This device is part of the OptiMOS™ series, known for its excellent electrical characteristics and reliability. With a drain-source voltage rating of 40V and a continuous drain current of 100A at 25°C, it is suitable for a wide range of applications requiring high power and efficiency.
IPC100N04S5L1R9ATMA1 Features
- Technology: MOSFET (Metal Oxide), offering superior performance and reliability.
- Input Capacitance (Ciss): Maximum 4310 pF at 25V, ensuring fast switching and low power consumption.
- Gate Charge (Qg): Maximum 81 nC at 10V, reducing switching losses and improving efficiency.
- Drain to Source Voltage (Vdss): 40V, suitable for high-voltage applications.
- Power Dissipation (Max): 100W (Tc), allowing for high power operation.
- Rds On (Max): 1.9mOhm at 50A, 10V, providing low on-resistance and high efficiency.
- Vgs (Max): ±16V, offering flexibility in gate voltage requirements.
- Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On), ensuring easy drive and control.
- Mounting Type: Surface Mount, ideal for space-constrained applications.
- Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring robustness in various environmental conditions.
- REACH Status: REACH Unaffected, complying with environmental regulations.
- RoHS Status: ROHS3 Compliant, adhering to.
IPC100N04S5L1R9ATMA1 Applications
The IPC100N04S5L1R9ATMA1 is ideal for applications requiring high power and efficiency, such as:
- Power Electronics: In power supplies, converters, and inverters where high voltage and current ratings are essential.
- Industrial Automation: For motor drives and control systems that demand high power and reliability.
- Automotive Electronics: In electric vehicle components, such as battery management systems and powertrain control units.
- Telecommunications: For high-power amplifiers and signal processing circuits in base stations and network equipment.
Conclusion of IPC100N04S5L1R9ATMA1
The IPC100N04S5L1R9ATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, offering excellent electrical characteristics, reliability, and flexibility. Its unique features, such as low on-resistance, high input capacitance, and compliance with environmental regulations, make it an ideal choice for high-power applications in various industries. Despite being marked as "Not For New Designs," it remains a robust solution for existing designs and applications that require its specific performance capabilities.



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