Infineon Technologies
IPD031N03M G

278-IPD031N03M G
PDF Datasheet
MOSFET N-CH 30V 90A TO252-3

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
5300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Product Status
Discontinued at Digi-Key
Supplier Device Package
PG-TO252-3-11
Drain to Source Voltage (Vdss)
30 V
Power Dissipation (Max)
-
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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IPD031N03M G Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the IPD031N03M G belongs to can be classified under the Discrete Semiconductors. IPD031N03M G is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. IPD031N03M G provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Infineon Technologies plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Infineon Technologies is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Infineon Technologies builds trust with consumers and enhances the overall reputation of their products.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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