Infineon Technologies_IPD110N12N3GATMA1
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Infineon Technologies
IPD110N12N3GATMA1

278-IPD110N12N3GATMA1
PDF Datasheet
MOSFET N-CH 120V 75A TO252-3
20 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
24
Input Capacitance (Ciss) (Max) @ Vds
4310 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Typical Rise Time (ns)
16
PPAP
Unknown
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
16
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IPD110N12N3GATMA1 Description

IPD110N12N3GATMA1 Description

The IPD110N12N3GATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and reliability. This device features a drain-to-source voltage (Vdss) of 120V, a continuous drain current (Id) of 75A at 25°C, and a maximum power dissipation of 136W. With its low on-resistance of 11mOhm at 75A and 10V gate-source voltage, the IPD110N12N3GATMA1 offers excellent efficiency and performance.

IPD110N12N3GATMA1 Features

  • Technology: MOSFET (Metal Oxide)
  • Series: OptiMOS™
  • Input Capacitance (Ciss): 4310 pF @ 60V
  • Gate Charge (Qg): 65 nC @ 10V
  • Vgs (Max): ±20V
  • Vgs(th) (Max): 3V @ 83µA (Typ)
  • Rds On (Max): 11mOhm @ 75A, 10V
  • Drive Voltage: 10V
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

IPD110N12N3GATMA1 Applications

The IPD110N12N3GATMA1 is ideal for a wide range of applications, including:

  1. Power Supplies: Due to its high voltage and current ratings, this MOSFET is suitable for high-power switching applications in power supplies.
  2. Motor Controls: The low on-resistance and high current capability make it an excellent choice for motor control applications, providing efficient power switching.
  3. Industrial Automation: Its robust performance and reliability make it suitable for use in industrial automation systems, where high power and efficiency are required.
  4. Automotive Applications: The IPD110N12N3GATMA1 can be used in automotive applications, such as electric vehicle charging systems and power management.

Conclusion of IPD110N12N3GATMA1

The IPD110N12N3GATMA1 from Infineon Technologies is a high-performance N-Channel MOSFET that offers excellent efficiency, reliability, and performance for a wide range of applications. Its unique features, such as low on-resistance, high voltage and current ratings, and robust construction, make it an ideal choice for power supplies, motor controls, industrial automation, and automotive applications. With its compliance with REACH and RoHS regulations, the IPD110N12N3GATMA1 is a reliable and environmentally friendly solution for high-power switching needs.

FAQ

What operating temperature range does IPD110N12N3GATMA1 support?
IPD110N12N3GATMA1 has an operating temperature range of -55°C ~ 175°C (TJ).
What is IPD110N12N3GATMA1?
Is IPD110N12N3GATMA1 currently in stock?
What is the mounting type of IPD110N12N3GATMA1?
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