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IPD30N06S2L-13

IPD30N06S2L-13 Description

The IPD30N06S2L-13 is a high-performance N-channel MOSFET from Infineon Technologies, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 30A at 25°C, this device is well-suited for power electronics and motor control applications. The IPD30N06S2L-13 features a low on-resistance (Rds On) of 13mOhm at 30A and 10V, ensuring minimal power loss and high efficiency.

IPD30N06S2L-13 Features

• Low On-Resistance: The IPD30N06S2L-13 boasts a low Rds On of 13mOhm at 30A and 10V, reducing power dissipation and improving efficiency in power conversion applications.
• High Input Capacitance: With an input capacitance (Ciss) of up to 1800 pF at 25V, this MOSFET offers fast switching speeds and reduced switching losses.
• Low Gate Charge: The maximum gate charge (Qg) of 69 nC at 10V enables quick charging and discharging of the gate, further enhancing switching performance.
• Robust Power Handling: Capable of withstanding a maximum power dissipation of 136W (Tc), the IPD30N06S2L-13 is suitable for high-power applications.
• Compliance: This device is REACH unaffected, RoHS3 compliant, and has a moisture sensitivity level (MSL) of 1, making it suitable for various industrial applications.

IPD30N06S2L-13 Applications

The IPD30N06S2L-13 is ideal for a range of applications, including:

• Power Electronics: Due to its high power handling capabilities and low on-resistance, this MOSFET is well-suited for power conversion and regulation in various electronic devices.
• Motor Control: The IPD30N06S2L-13's robust performance and fast switching speeds make it an excellent choice for motor control applications, such as electric vehicles and industrial automation systems.
• Industrial Automation: This MOSFET's high power dissipation and low on-resistance make it ideal for use in industrial automation systems, where reliability and efficiency are critical.

Conclusion of IPD30N06S2L-13

The IPD30N06S2L-13 from Infineon Technologies is a high-performance N-channel MOSFET that offers a combination of low on-resistance, high input capacitance, and robust power handling capabilities. Its compliance with industry standards, such as REACH and RoHS, further enhances its appeal for a wide range of applications in power electronics, motor control, and industrial automation. With its unique features and advantages, the IPD30N06S2L-13 stands out as a reliable and efficient solution for demanding applications in the electronics industry.