Infineon Technologies_IPD50N04S308ATMA1
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Infineon Technologies
IPD50N04S308ATMA1

278-IPD50N04S308ATMA1
PDF Datasheet
MOSFET N-CH 40V 50A TO252-3

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Product Status
Not For New Designs
Supplier Device Package
PG-TO252-3-11
Drain to Source Voltage (Vdss)
40 V
Power Dissipation (Max)
68W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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IPD50N04S308ATMA1 Description

IPD50N04S308ATMA1 Description

The IPD50N04S308ATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, designed for applications requiring efficient power management and control. With a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 50A at 25°C, this device offers robust performance in various power electronic applications. The OptiMOS™ series ensures low on-resistance and high efficiency, making it an ideal choice for power switching and motor control applications.

IPD50N04S308ATMA1 Features

  • Low On-Resistance: The IPD50N04S308ATMA1 boasts a maximum Rds(on) of 7.5mOhm at 50A and 10V Vgs, ensuring minimal power loss and high efficiency.
  • High Input Capacitance: With a maximum Ciss of 2350 pF at 25V, this MOSFET provides fast switching capabilities and reduced noise in high-frequency applications.
  • Low Gate Charge: A maximum Qg of 35 nC at 10V Vgs contributes to faster switching speeds and reduced power consumption in the gate drive circuit.
  • Robust Thermal Performance: Capable of withstanding a maximum power dissipation of 68W at Tc, this device is suitable for high-power applications.
  • Surface Mount Technology: The IPD50N04S308ATMA1 is available in a TO252-3 package, making it ideal for surface-mount applications in compact designs.

IPD50N04S308ATMA1 Applications

The IPD50N04S308ATMA1 is well-suited for a variety of applications, including:

  • Power Supplies: Its high voltage and current ratings make it ideal for power supply designs, where efficient power management is crucial.
  • Motor Control: The low on-resistance and high current capabilities make it suitable for motor control applications, ensuring efficient operation and reduced power loss.
  • Industrial Automation: The robust thermal performance and high power dissipation capabilities make it suitable for industrial automation systems, where reliability and efficiency are paramount.

Conclusion of IPD50N04S308ATMA1

The IPD50N04S308ATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, offering a combination of low on-resistance, high input capacitance, and robust thermal performance. Its unique features make it an ideal choice for power supply, motor control, and industrial automation applications. While it is not recommended for new designs, it remains a reliable option for existing systems that require its specific performance characteristics.

FAQ

What is the mounting type of IPD50N04S308ATMA1?
IPD50N04S308ATMA1 uses a Surface Mount mounting style based on the listed product specifications.
What voltage specification is listed for IPD50N04S308ATMA1?
What operating temperature range does IPD50N04S308ATMA1 support?
What is IPD50N04S308ATMA1?
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