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IPD50N04S410ATMA1
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IPD50N04S410ATMA1 Description
IPD50N04S410ATMA1 Description
The IPD50N04S410ATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and power handling. With a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 50A at 25°C, this device is well-suited for power electronics and motor control applications.
IPD50N04S410ATMA1 Features
- Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
- Input Capacitance (Ciss): 1430 pF @ 25V - Minimizes input capacitance for faster switching speeds.
- Gate Charge (Qg): 18.2 nC @ 10V - Reduces switching losses and improves efficiency.
- Rds On (Max): 9.3 mOhm @ 50A, 10V - Offers low on-resistance for minimal power dissipation.
- Vgs(th) (Max): 4V @ 15µA - Ensures reliable gate threshold voltage for consistent operation.
- Mounting Type: Surface Mount - Facilitates easy integration into printed circuit boards (PCBs).
- Package: Tape & Reel (TR) - Suitable for automated assembly processes.
IPD50N04S410ATMA1 Applications
The IPD50N04S410ATMA1 is ideal for a variety of applications where high power handling and efficiency are critical:
- Power Electronics: Power supplies, converters, and inverters.
- Motor Control: Brushless DC motors, stepper motors, and induction motors.
- Automotive: Electric vehicle (EV) charging systems, battery management systems, and powertrain control.
- Industrial Automation: Servo drives, robotic systems, and process control.
Conclusion of IPD50N04S410ATMA1
The IPD50N04S410ATMA1 stands out among similar models due to its combination of high power handling, low on-resistance, and fast switching capabilities. Its unique features, such as low gate charge and input capacitance, contribute to improved efficiency and performance in demanding applications. With its robust design and compliance with industry standards like RoHS3 and REACH, the IPD50N04S410ATMA1 is a reliable choice for engineers looking to optimize their power electronic designs.



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