Infineon Technologies_IPD50N04S4L08ATMA1
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Infineon Technologies
IPD50N04S4L08ATMA1

278-IPD50N04S4L08ATMA1
PDF Datasheet
MOSFET N-CH 40V 50A TO252-3
12 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
11
Input Capacitance (Ciss) (Max) @ Vds
2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Typical Rise Time (ns)
8
PPAP
Unknown
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
4
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IPD50N04S4L08ATMA1 Description

IPD50N04S4L08ATMA1 Description

The IPD50N04S4L08ATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for automotive applications. This device features a 40V drain-to-source voltage rating, a continuous drain current of 50A at 25°C, and a low on-resistance of 7.3mOhm at 50A and 10V gate-source voltage. The IPD50N04S4L08ATMA1 is manufactured using advanced MOSFET technology, ensuring high efficiency and reliability in demanding automotive applications.

IPD50N04S4L08ATMA1 Features

  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25V
  • Vgs(th) (Max) @ Id: 2.2V @ 17µA
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Power Dissipation (Max): 46W (Tc)
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Grade: Automotive
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • Series: OptiMOS™

IPD50N04S4L08ATMA1 Applications

The IPD50N04S4L08ATMA1 is ideal for various automotive applications where high efficiency, low power dissipation, and reliability are critical. Some specific use cases include:

  1. Battery Management Systems: The high current capability and low on-resistance make it suitable for managing high-current battery charging and discharging.
  2. Power Train Control: The device's high voltage and current ratings make it suitable for power train control applications, such as electric vehicle motors.
  3. Inverters and Converters: The IPD50N04S4L08ATMA1 can be used in high-efficiency inverters and converters for electric and hybrid vehicles.
  4. Body Electronics: The device's automotive grade and low power dissipation make it suitable for various body electronics, such as window lifts and seat controls.

Conclusion of IPD50N04S4L08ATMA1

The IPD50N04S4L08ATMA1 from Infineon Technologies is a high-performance N-Channel MOSFET designed for demanding automotive applications. Its unique combination of high voltage, low on-resistance, and high efficiency makes it an ideal choice for battery management systems, power train control, inverters, and body electronics. With its automotive grade and compliance with REACH and RoHS standards, the IPD50N04S4L08ATMA1 offers a reliable and environmentally friendly solution for next-generation automotive systems.

FAQ

What package or case is IPD50N04S4L08ATMA1 available in?
IPD50N04S4L08ATMA1 is available in the TO-252-3, DPAK (2 Leads + Tab), SC-63 package / case.
What operating temperature range does IPD50N04S4L08ATMA1 support?
Is IPD50N04S4L08ATMA1 currently in stock?
What is the standard lead time for IPD50N04S4L08ATMA1?
Are there related or alternative parts for IPD50N04S4L08ATMA1?
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