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IPD50P04P413ATMA2

IPD50P04P413ATMA2 Description

The IPD50P04P413ATMA2 is a high-performance MOSFET (Metal Oxide) from Infineon Technologies, designed for applications requiring high power dissipation and robust electrical characteristics. This P-Channel device is housed in a TO252-3 package, making it suitable for surface mount applications. With a maximum drain-source voltage of 40V and a continuous drain current of 50A at 25°C, the IPD50P04P413ATMA2 is ideal for power electronics and motor control applications.

IPD50P04P413ATMA2 Features

• High Power Dissipation: Capable of handling up to 58W of power dissipation at the case temperature (Tc), ensuring reliable operation in high-power applications.
• Low On-Resistance: With a maximum Rds(on) of 12.6mOhm at 50A and 10V Vgs, the IPD50P04P413ATMA2 offers low conduction losses and high efficiency.
• Robust Gate Characteristics: Features a maximum gate charge (Qg) of 51nC at 10V Vgs and a threshold voltage (Vgs(th)) of 4V at 85µA, providing fast switching and low gate drive requirements.
• Wide Voltage Range: Operates with a maximum gate-source voltage (Vgs) of ±20V, allowing for compatibility with various gate drive circuits.
• Environmental Compliance: REACH Unaffected and RoHS3 Compliant, ensuring compliance with environmental regulations and suitability for global markets.
• Low Moisture Sensitivity: With a Moisture Sensitivity Level (MSL) of 1, the IPD50P04P413ATMA2 can be stored and handled without strict humidity control.

IPD50P04P413ATMA2 Applications

The IPD50P04P413ATMA2 is well-suited for a variety of high-power applications, including:

• Power Electronics: Ideal for power conversion and distribution systems, such as DC-DC converters and power supplies.
• Motor Control: Suitable for driving high-power motors in industrial and automotive applications, providing efficient and precise control.
• RF Power Amplifiers: Capable of handling high power levels in radio frequency (RF) power amplifiers for telecommunications and broadcasting systems.

Conclusion of IPD50P04P413ATMA2

The IPD50P04P413ATMA2 from Infineon Technologies is a high-performance MOSFET designed for demanding power electronics and motor control applications. Its combination of high power dissipation, low on-resistance, and robust gate characteristics make it an excellent choice for applications requiring high efficiency and reliability. With its environmental compliance and low moisture sensitivity, the IPD50P04P413ATMA2 is a versatile solution for a wide range of high-power applications.