Infineon Technologies_IPD530N15N3GATMA1
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Infineon Technologies
IPD530N15N3GATMA1

278-IPD530N15N3GATMA1
PDF Datasheet
MOSFET N-CH 150V 21A TO252-3
20 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
13
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
887 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Typical Rise Time (ns)
9
PPAP
Unknown
Channel Mode
Enhancement
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IPD530N15N3GATMA1 Description

IPD530N15N3GATMA1 Description

The IPD530N15N3GATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, featuring advanced OptiMOS™ technology. This device is designed for applications requiring high efficiency and low power consumption, with a continuous drain current of 21A at 25°C and a drain-to-source voltage of 150V. The IPD530N15N3GATMA1 is RoHS3 compliant and REACH unaffected, ensuring environmental sustainability.

IPD530N15N3GATMA1 Features

  • OptiMOS™ Technology: Infineon's proprietary OptiMOS™ technology provides superior performance, including low Rds(on) of 53mΩ at 18A and 10V, and a low gate charge of 12nC at 10V.
  • High Input Capacitance (Ciss): With a maximum input capacitance of 887pF at 75V, the IPD530N15N3GATMA1 offers improved high-frequency performance.
  • Robust Voltage Ratings: The device can handle a maximum Vgs of ±20V and a drain-to-source voltage of 150V, making it suitable for a wide range of applications.
  • Low Power Dissipation: The IPD530N15N3GATMA1 has a maximum power dissipation of 68W at Tc, ensuring reliable operation in demanding conditions.
  • Surface Mount Packaging: The TO252-3 package allows for easy integration into surface mount applications, reducing overall footprint and improving manufacturing efficiency.

IPD530N15N3GATMA1 Applications

The IPD530N15N3GATMA1 is ideal for applications where high efficiency and low power consumption are critical, such as:

  • Power Supplies: Due to its low Rds(on) and high drain current, the IPD530N15N3GATMA1 is well-suited for power supply applications, including SMPS and DC-DC converters.
  • Motor Controls: The device's high current handling capability and robust voltage ratings make it an excellent choice for motor control applications, such as BLDC motor drivers.
  • Automotive Electronics: The IPD530N15N3GATMA1's ability to handle high voltages and currents, along with its automotive-grade packaging, make it suitable for various automotive applications, including electric power steering and battery management systems.

Conclusion of IPD530N15N3GATMA1

The IPD530N15N3GATMA1 from Infineon Technologies is a high-performance N-Channel MOSFET that offers a combination of low Rds(on), high current handling, and robust voltage ratings. Its OptiMOS™ technology and surface mount packaging make it an ideal choice for a wide range of applications, including power supplies, motor controls, and automotive electronics. With its RoHS3 compliance and REACH unaffected status, the IPD530N15N3GATMA1 is also an environmentally responsible choice for your next design.

FAQ

What is the standard lead time for IPD530N15N3GATMA1?
The standard lead time for IPD530N15N3GATMA1 is 20 Weeks.
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