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IPD60R180P7ATMA1

IPD60R180P7ATMA1 Description

The IPD60R180P7ATMA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power applications. Part of the CoolMOS™ P7 series, it features a 600V drain-to-source voltage (Vdss) and 18A continuous drain current (Id) at 25°C, making it ideal for high-efficiency power conversion. With an ultra-low on-resistance (Rds(on)) of 180mΩ at 10V gate drive, this MOSFET minimizes conduction losses, enhancing overall system efficiency. Packaged in a TO-252-3 (DPAK) surface-mount format, it is optimized for automated assembly and compact designs.

IPD60R180P7ATMA1 Features

• Advanced CoolMOS™ P7 Technology: Delivers superior switching performance and reduced switching losses, critical for high-frequency applications.
• Low Gate Charge (Qg): 25nC at 10V ensures fast switching and lower drive losses, improving efficiency in PWM circuits.
• High Input Capacitance (Ciss): 1081pF at 400V balances switching speed with noise immunity.
• Robust Thermal Performance: 72W power dissipation (Tc) enables reliable operation under high-load conditions.
• Wide Vgs Range: ±20V gate-source voltage tolerance enhances flexibility in drive circuitry.
• Compliance: ROHS3 and REACH compliant, with MSL 1 (unlimited) moisture sensitivity for extended shelf life.

IPD60R180P7ATMA1 Applications

This MOSFET excels in:

• Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters, PFC stages, and LLC resonant topologies.
• Industrial Power Systems: Motor drives, inverters, and UPS systems requiring low Rds(on) and high reliability.
• Renewable Energy: Solar inverters and battery management systems (BMS) where efficiency and thermal performance are critical.
• Automotive Electronics: Auxiliary power modules and charging systems (non-safety-critical).

Conclusion of IPD60R180P7ATMA1

The IPD60R180P7ATMA1 combines Infineon’s CoolMOS™ P7 technology with industry-leading efficiency, making it a top choice for high-voltage, high-current applications. Its low Rds(on), fast switching, and robust thermal characteristics outperform competing models in energy-sensitive designs. Whether for industrial, renewable, or automotive applications, this MOSFET delivers reliable performance, reduced losses, and compact integration, aligning with modern power electronics demands.