Infineon Technologies_IPD60R360P7ATMA1
original

Infineon Technologies
IPD60R360P7ATMA1

278-IPD60R360P7ATMA1
PDF Datasheet
MOSFET N-CH 600V 9A TO252-3
20 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
42
Maximum Gate Source Leakage Current (nA)
1000
Input Capacitance (Ciss) (Max) @ Vds
555 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Typical Rise Time (ns)
7
PPAP
No
Channel Mode
Enhancement
Show More

IPD60R360P7ATMA1 Description

IPD60R360P7ATMA1 Description

The IPD60R360P7ATMA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power management applications. Part of the CoolMOS™ P7 series, it features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9A (Tc), making it suitable for high-efficiency switching circuits. With an Rds(on) of just 360mΩ at 10V gate drive, this MOSFET minimizes conduction losses, enhancing overall system efficiency. Its low gate charge (Qg) of 13nC and input capacitance (Ciss) of 555pF ensure fast switching performance, reducing power dissipation in high-frequency applications. Packaged in a TO-252-3 (DPAK) surface-mount form factor, it is optimized for automated assembly and compact designs.

IPD60R360P7ATMA1 Features

  • Advanced CoolMOS™ P7 Technology: Delivers superior efficiency with reduced switching and conduction losses.
  • High Voltage Rating: 600V Vdss ensures reliability in industrial and automotive applications.
  • Low On-Resistance: 360mΩ @ 10V Vgs minimizes heat generation and improves power handling.
  • Fast Switching: Low Qg (13nC) and Ciss (555pF) enable high-frequency operation.
  • Robust Thermal Performance: 41W power dissipation (Tc) ensures stability under load.
  • Wide Gate-Source Voltage Range: ±20V Vgs(max) offers flexibility in drive circuitry.
  • Compliant Standards: ROHS3, REACH Unaffected, ECCN EAR99, and MSL 1 (Unlimited) for global compatibility.

IPD60R360P7ATMA1 Applications

  • Switched-Mode Power Supplies (SMPS): Ideal for AC-DC converters, PFC stages, and DC-DC converters due to high efficiency.
  • Motor Drives: Suitable for industrial motor control and HVAC systems with its high voltage tolerance.
  • Lighting Solutions: Efficiently powers LED drivers and ballast circuits.
  • Renewable Energy: Used in solar inverters and energy storage systems for reliable switching.
  • Automotive Electronics: Supports 48V systems, onboard chargers, and DC-DC converters in electric vehicles.

Conclusion of IPD60R360P7ATMA1

The IPD60R360P7ATMA1 stands out as a high-efficiency MOSFET for power electronics, combining low Rds(on), fast switching, and high voltage capability. Its CoolMOS™ P7 technology ensures optimal performance in SMPS, motor drives, and renewable energy systems, while its compact TO-252-3 package suits space-constrained designs. With Infineon’s reliability and compliance with global standards, this MOSFET is a top choice for engineers seeking durability, efficiency, and thermal robustness in high-power applications.

FAQ

What voltage specification is listed for IPD60R360P7ATMA1?
The listed voltage-related specification for IPD60R360P7ATMA1 is 600 V.
Are there related or alternative parts for IPD60R360P7ATMA1?
What package or case is IPD60R360P7ATMA1 available in?
What is the standard lead time for IPD60R360P7ATMA1?
What is IPD60R360P7ATMA1?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ