Infineon Technologies_IPD60R600P6
original

Infineon Technologies
IPD60R600P6

278-IPD60R600P6
PDF Datasheet
MOSFET N-CH 600V 7.3A TO252-3

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Product Status
Discontinued at Digi-Key
Supplier Device Package
PG-TO252-3
Drain to Source Voltage (Vdss)
600 V
Power Dissipation (Max)
63W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Show More

IPD60R600P6 Description

IPD60R600P6 Description

The IPD60R600P6 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding power electronics applications. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 7.3A at 25°C, this device delivers robust performance in a compact TO252-3 package. Key features include low on-resistance (Rds On) of 600mOhm at 2.4A and 10V, and a maximum gate-source voltage (Vgs) of ±20V. The IPD60R600P6 is also compliant with RoHS3 and REACH regulations, making it suitable for environmentally conscious designs.

IPD60R600P6 Features

  • 600V Drain-to-Source Voltage (Vdss): Provides high voltage protection in power electronics applications.
  • 7.3A Continuous Drain Current (Id) @ 25°C: Offers high current handling capability for efficient power management.
  • Low Rds On of 600mOhm @ 2.4A, 10V: Minimizes power losses and improves efficiency in power conversion circuits.
  • ±20V Maximum Gate-Source Voltage (Vgs): Allows for flexible gate drive options and compatibility with various gate drivers.
  • 557 pF Maximum Input Capacitance (Ciss) @ 100V: Reduces charging/discharging times and improves switching performance.
  • 12 nC Maximum Gate Charge (Qg) @ 10V: Contributes to faster switching speeds and lower switching losses.
  • 63W Maximum Power Dissipation (Tc): Enables operation in high-power applications without overheating.
  • Surface Mount Packaging: Facilitates integration into compact and densely populated PCB designs.

IPD60R600P6 Applications

The IPD60R600P6 is ideal for a variety of high-power and high-efficiency applications, including:

  1. Switching Power Supplies (SMPS): Utilizes the high voltage and current ratings for reliable power conversion.
  2. Motor Drives: Leverages the low Rds On for efficient motor control and reduced power losses.
  3. Battery Management Systems (BMS): Benefits from the high voltage rating for safe and efficient battery charging and protection.
  4. Industrial Automation: Relies on the robust performance for demanding control applications in industrial settings.

Conclusion of IPD60R600P6

The IPD60R600P6 from Infineon Technologies is a versatile and high-performance N-Channel MOSFET designed for demanding power electronics applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an excellent choice for switching power supplies, motor drives, battery management systems, and industrial automation. With its compliance with RoHS3 and REACH regulations, the IPD60R600P6 is also an environmentally friendly option for designers looking to minimize the environmental impact of their products.

FAQ

What voltage specification is listed for IPD60R600P6?
The listed voltage-related specification for IPD60R600P6 is 600 V.
Is IPD60R600P6 currently in stock?
What operating temperature range does IPD60R600P6 support?
What package or case is IPD60R600P6 available in?
What is the mounting type of IPD60R600P6?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ