Infineon Technologies_IPD60R600P7ATMA1
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Infineon Technologies
IPD60R600P7ATMA1

278-IPD60R600P7ATMA1
PDF Datasheet
MOSFET N-CH 600V 6A TO252-3
20 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
37
Maximum Gate Source Leakage Current (nA)
1000
Input Capacitance (Ciss) (Max) @ Vds
363 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Typical Rise Time (ns)
6
PPAP
No
Channel Mode
Enhancement
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IPD60R600P7ATMA1 Description

IPD60R600P7ATMA1 Description

The IPD60R600P7ATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring efficient power management and control. With a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 6A at 25°C, this device offers robust performance in demanding environments. It features a low on-resistance of 600mOhm at 1.7A and 10V Vgs, ensuring minimal power loss and high efficiency.

IPD60R600P7ATMA1 Features

  • 600V Drain-Source Voltage (Vdss): Provides high voltage tolerance for applications requiring robust power handling.
  • 6A Continuous Drain Current (Id) @ 25°C: Delivers ample current for demanding power management tasks.
  • Low On-Resistance (Rds On): At 600mOhm, it minimizes power dissipation and improves efficiency.
  • CoolMOS™ P7 Series: Part of Infineon's advanced P7 series, known for high efficiency and reliability.
  • Surface Mount Technology: Facilitates integration into compact, space-constrained designs.
  • REACH Unaffected and RoHS3 Compliant: Ensures environmental compliance and suitability for global markets.
  • Moisture Sensitivity Level (MSL) 1: Allows for unlimited storage time, reducing handling concerns.

IPD60R600P7ATMA1 Applications

The IPD60R600P7ATMA1 is ideal for a variety of applications where high voltage and current handling are required, combined with space efficiency:

  • Power Supplies: Its high voltage and current ratings make it suitable for power supply designs in consumer electronics and industrial equipment.
  • Motor Controls: The device's robust specifications are well-suited for motor control applications, providing reliable performance in variable conditions.
  • Automotive Electronics: The IPD60R600P7ATMA1's ability to handle high voltages and currents, along with its compact form factor, makes it an excellent choice for automotive electronics, such as electric vehicle components.

Conclusion of IPD60R600P7ATMA1

The IPD60R600P7ATMA1 stands out for its combination of high voltage and current capabilities, low on-resistance, and compact surface-mount design. Its inclusion in Infineon's CoolMOS™ P7 series highlights its advanced technology and performance. This MOSFET is an excellent choice for applications requiring high efficiency and reliability, such as power supplies, motor controls, and automotive electronics. Its compliance with environmental standards and unlimited storage time further enhance its appeal for global markets.

FAQ

What is IPD60R600P7ATMA1?
IPD60R600P7ATMA1 is a Single FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
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