Infineon Technologies_IPD70R900P7SAUMA1
original

Infineon Technologies
IPD70R900P7SAUMA1

278-IPD70R900P7SAUMA1
PDF Datasheet
MOSFET N-CH 700V 6A TO252-3
20 Weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
58
Maximum Gate Source Leakage Current (nA)
1000
Input Capacitance (Ciss) (Max) @ Vds
211 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 10 V
Typical Rise Time (ns)
4.7
PPAP
No
Channel Mode
Enhancement
Show More

IPD70R900P7SAUMA1 Description

IPD70R900P7SAUMA1 Description

The IPD70R900P7SAUMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high voltage and current handling capabilities. This device is part of the CoolMOS™ P7 series, known for its superior efficiency and thermal performance. With a drain-to-source voltage (Vdss) of 700V and a continuous drain current (Id) of 6A at 25°C, the IPD70R900P7SAUMA1 is well-suited for demanding power electronic applications.

IPD70R900P7SAUMA1 Features

  • High Voltage and Current Ratings: The IPD70R900P7SAUMA1 boasts a drain-to-source voltage of 700V and can handle a continuous drain current of 6A at 25°C, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum on-resistance (Rds On) of 900mOhm at 1.1A and 10V, this MOSFET offers low power dissipation and high efficiency.
  • Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±16V, ensuring reliable operation across a wide range of gate drive conditions.
  • Surface Mount Technology: The IPD70R900P7SAUMA1 is available in a surface-mount package, facilitating integration into compact and densely populated circuit boards.
  • Environmental Compliance: This MOSFET is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations and supporting sustainable manufacturing practices.

IPD70R900P7SAUMA1 Applications

The IPD70R900P7SAUMA1 is an excellent choice for applications requiring high voltage and current handling capabilities, such as:

  • Power Supplies: The high voltage and current ratings make this MOSFET suitable for power supply designs, including switching power supplies and power factor correction circuits.
  • Motor Control: The device's robust performance characteristics make it ideal for motor control applications, including electric vehicles, industrial motor drives, and robotics.
  • Renewable Energy Systems: The IPD70R900P7SAUMA1 can be used in solar inverters and wind power systems, where high efficiency and reliability are critical.

Conclusion of IPD70R900P7SAUMA1

The IPD70R900P7SAUMA1 from Infineon Technologies is a powerful N-Channel MOSFET that delivers exceptional performance in high-voltage and high-current applications. Its unique features, such as low on-resistance, robust gate drive, and environmental compliance, make it a top choice for demanding power electronic applications. With its versatility and reliability, the IPD70R900P7SAUMA1 is a valuable addition to any engineer's toolkit for designing efficient and reliable power electronic systems.

FAQ

What is the mounting type of IPD70R900P7SAUMA1?
IPD70R900P7SAUMA1 uses a Surface Mount mounting style based on the listed product specifications.
Are there related or alternative parts for IPD70R900P7SAUMA1?
What operating temperature range does IPD70R900P7SAUMA1 support?
What is IPD70R900P7SAUMA1?
What package or case is IPD70R900P7SAUMA1 available in?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ