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IPDD60R080G7XTMA1

IPDD60R080G7XTMA1 Description

The IPDD60R080G7XTMA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power electronics applications. Part of the CoolMOS™ G7 series, it features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 29A at 25°C (case temperature), making it suitable for high-power switching. With an ultra-low on-resistance (Rds(on)) of 80mΩ at 10V gate drive, it minimizes conduction losses, enhancing efficiency in power conversion systems. The device is housed in an HDSOP-10 surface-mount package, optimized for compact designs and thermal management.

IPDD60R080G7XTMA1 Features

• Low Gate Charge (Qg): 42nC at 10V ensures fast switching and reduced drive losses, ideal for high-frequency applications.
• High Voltage Tolerance: Vdss of 600V with robust ±20V gate-source voltage (Vgs) capability.
• Efficient Thermal Performance: 174W maximum power dissipation (Tc) and advanced packaging for superior heat dissipation.
• Optimized Switching Characteristics: Input capacitance (Ciss) of 1640pF at 400V balances speed and noise immunity.
• Reliability Compliance: ROHS3 and REACH compliant, with MSL 1 (Unlimited) moisture sensitivity for extended shelf life.

IPDD60R080G7XTMA1 Applications

This MOSFET excels in:

• Switched-Mode Power Supplies (SMPS): High efficiency and low losses in PFC, LLC, and flyback topologies.
• Industrial Motor Drives: Robust performance in inverters and motor control systems.
• Renewable Energy Systems: Solar inverters and battery management due to high voltage handling.
• Automotive Electronics: On-board chargers (OBC) and DC-DC converters, leveraging its reliability.
• Telecom Power Supplies: Compact, high-density designs benefit from its HDSOP-10 package.

Conclusion of IPDD60R080G7XTMA1

The IPDD60R080G7XTMA1 combines Infineon’s CoolMOS™ G7 technology with industry-leading efficiency, making it a top choice for high-voltage, high-current applications. Its low Rds(on), fast switching, and thermal robustness address critical challenges in modern power electronics, while compliance with environmental standards ensures long-term viability. Engineers designing high-efficiency power systems will find this MOSFET a reliable and future-proof solution.