Infineon Technologies_IPI70R950CE
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Infineon Technologies
IPI70R950CE

285-IPI70R950CE
POWER FIELD-EFFECT TRANSISTOR / N-Channel 700 V 7.4A (Tc) 68W (Tc) Through Hole PG-TO262-3-1

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Tech Specifications

Rds On (Max) @ Id, Vgs
950mOhm @ 1.5A, 10V
FET Type
N-Channel
Vgs(th) (Max) @ Id
3.5V @ 150mA
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Standard Package
1
Drain to Source Voltage (Vdss)
700 V
Series
CoolMOS™
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IPI70R950CE Description

Bulk provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The RF FETs, MOSFETs that the IPI70R950CE belongs to can be classified under the Discrete Semiconductors. IPI70R950CE is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. IPI70R950CE provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Infineon Technologies plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Infineon Technologies is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Infineon Technologies builds trust with consumers and enhances the overall reputation of their products.

FAQ

What package or case is IPI70R950CE available in?
IPI70R950CE is available in the TO-262-3 Long Leads, I²Pak, TO-262AA package / case.
What voltage specification is listed for IPI70R950CE?
Is IPI70R950CE currently in stock?
What is IPI70R950CE?
Are there related or alternative parts for IPI70R950CE?
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