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IPN60R360P7SATMA1

IPN60R360P7SATMA1 Description

The IPN60R360P7SATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and reliability. With a drain-to-source voltage of 600V and a continuous drain current of 9A at 25°C, this MOSFET is ideal for demanding power electronics applications. It features a low on-resistance of 360mOhm at 2.7A and 10V, ensuring minimal power loss and high efficiency. The IPN60R360P7SATMA1 is RoHS3 compliant and REACH unaffected, making it suitable for environmentally conscious designs.

IPN60R360P7SATMA1 Features

• 600V Drain-to-Source Voltage (Vdss): Capable of handling high voltage applications.
• 9A Continuous Drain Current (Id) @ 25°C: Provides high current capability for power electronics.
• 360mOhm On-Resistance (Rds On) @ 2.7A, 10V: Minimizes power loss and improves efficiency.
• 10V Drive Voltage (Max Rds On, Min Rds On): Ensures easy control and compatibility with various gate drivers.
• 13nC Maximum Gate Charge (Qg) @ 10V: Reduces switching losses and improves efficiency.
• 555pF Maximum Input Capacitance (Ciss) @ 400V: Minimizes capacitive effects and improves high-frequency performance.
• 4V Maximum Threshold Voltage (Vgs(th)) @ 140µA: Ensures reliable turn-on and low standby power consumption.
• ±20V Maximum Gate-to-Source Voltage (Vgs): Provides robustness against voltage spikes.
• 7W Maximum Power Dissipation (Tc): Allows for efficient heat management in high-power applications.
• Surface Mount Mounting Type: Facilitates integration into compact and high-density designs.

IPN60R360P7SATMA1 Applications

The IPN60R360P7SATMA1 is ideal for a wide range of power electronics applications, including:

1. Switching Power Supplies: Its high voltage and current ratings make it suitable for high-power SMPS designs.
2. Motor Drives: The low on-resistance and high current capability enable efficient motor control in industrial and automotive applications.
3. Battery Management Systems: The IPN60R360P7SATMA1's robustness and low on-resistance are beneficial for battery protection circuits.
4. Telecommunications: Its high efficiency and reliability make it suitable for power management in telecommunications equipment.

Conclusion of IPN60R360P7SATMA1

The IPN60R360P7SATMA1 from Infineon Technologies is a high-performance N-Channel MOSFET designed for demanding power electronics applications. Its combination of high voltage and current ratings, low on-resistance, and robustness against voltage spikes make it an ideal choice for applications such as switching power supplies, motor drives, battery management systems, and telecommunications equipment. With its RoHS3 compliance and REACH unaffected status, the IPN60R360P7SATMA1 is also an environmentally conscious solution for power electronics design.