Infineon Technologies

IPT007N06N

IPT007N06N Description

The IPT007N06N from Infineon Technologies is a high-performance N-channel MOSFET from the OptiMOS 5 series, designed for demanding power management applications. Built on advanced trench technology, it offers a 60V drain-source breakdown voltage (Vds) and an ultra-low on-resistance (Rds(on)) of just 750 µΩ, ensuring minimal conduction losses. With a continuous drain current (Id) rating of 300A, this single-channel enhancement-mode MOSFET excels in high-current switching scenarios. Its 175°C maximum operating temperature and 375W power dissipation (Pd) capability make it suitable for rugged environments. Packaged in a compact SMD/SMT format (10.58 x 10.1 x 2.4 mm), it is optimized for space-constrained designs while maintaining high thermal efficiency.

IPT007N06N Features

• Ultra-Low Rds(on): 750 µΩ minimizes power losses, improving efficiency.
• High Current Handling: 300A continuous drain current supports heavy-load applications.
• Fast Switching: 18 ns rise time and 22 ns fall time enhance performance in high-frequency circuits.
• Robust Thermal Performance: 175°C rating and 375W Pd ensure reliability under stress.
• Optimized Gate Charge (Qg): 216 nC balances switching speed and drive requirements.
• RoHS Compliant (By Exemption): Meets environmental standards while maintaining performance.
• Enhanced Transconductance: 160 S (min) for precise gate control.

IPT007N06N Applications

This MOSFET is ideal for:

• DC-DC Converters: High efficiency and low losses in step-up/step-down topologies.
• Motor Drives: Robust current handling for industrial and automotive motor control.
• Power Supplies: Server, telecom, and computing PSUs requiring high-density power delivery.
• Battery Management Systems (BMS): Efficient switching in high-current Li-ion protection circuits.
• Solar Inverters: Reliable performance in renewable energy applications.

Conclusion of IPT007N06N

The IPT007N06N stands out in the 40V–100V MOSFET category with its exceptional current capability, ultra-low Rds(on), and fast switching characteristics. Its OptiMOS 5 technology ensures superior efficiency and thermal management, making it a top choice for high-power, high-frequency applications. Whether in industrial automation, automotive systems, or renewable energy, this MOSFET delivers reliability, performance, and space-saving advantages over competing models.