Infineon Technologies_IPT60R050G7XTMA1
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Infineon Technologies
IPT60R050G7XTMA1

278-IPT60R050G7XTMA1
PDF Datasheet
MOSFET N-CH 600V 44A 8HSOF
20 Weeks

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Tech Specifications

Configuration
Single Seven Source
Typical Turn-Off Delay Time (ns)
72
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
2670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Typical Rise Time (ns)
6
PPAP
No
Channel Mode
Enhancement
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IPT60R050G7XTMA1 Description

IPT60R050G7XTMA1 Description

The IPT60R050G7XTMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, belonging to the CoolMOS™ G7 series. This device is designed to deliver exceptional performance in applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 44A at 25°C, the IPT60R050G7XTMA1 is well-suited for demanding power electronic applications.

IPT60R050G7XTMA1 Features

  • High Input Capacitance (Ciss): The IPT60R050G7XTMA1 boasts a maximum input capacitance of 2670 pF at 400V, ensuring fast switching speeds and improved high-frequency performance.
  • Low Gate Charge (Qg): With a maximum gate charge of 68 nC at 10V, this MOSFET minimizes switching losses, contributing to higher efficiency in power conversion applications.
  • Robust Power Dissipation: Capable of handling up to 245W of power dissipation, the IPT60R050G7XTMA1 is ideal for high-power applications.
  • Surface Mount Technology: The device's surface mount packaging allows for compact and efficient integration into various electronic systems.
  • Compliance with Industry Standards: The IPT60R050G7XTMA1 is REACH unaffected, RoHS3 compliant, and classified under ECCN EAR99, ensuring regulatory compliance and environmental friendliness.

IPT60R050G7XTMA1 Applications

The IPT60R050G7XTMA1 is an excellent choice for applications that demand high voltage and current handling capabilities, such as:

  • Power Supplies: Due to its high Vdss and Id ratings, this MOSFET is ideal for use in power supply designs, including switching power supplies and battery chargers.
  • Industrial Automation: The robustness and performance of the IPT60R050G7XTMA1 make it suitable for motor control applications in industrial automation systems.
  • Renewable Energy Systems: With its ability to handle high voltages and currents, this MOSFET is well-suited for solar inverters and other renewable energy systems.

Conclusion of IPT60R050G7XTMA1

The IPT60R050G7XTMA1 from Infineon Technologies is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage and current ratings, low gate charge, and fast switching capabilities. Its unique features and compliance with industry standards make it an ideal choice for a wide range of high-performance power electronic applications, from power supplies to industrial automation and renewable energy systems.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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