Infineon Technologies_IPZ40N04S58R4ATMA1
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Infineon Technologies
IPZ40N04S58R4ATMA1

278-IPZ40N04S58R4ATMA1
PDF Datasheet
MOSFET N-CH 40V 40A 8TSDSON-32
18 Weeks

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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
3
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
771 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
13.7 nC @ 10 V
Typical Rise Time (ns)
2
PPAP
Unknown
Channel Mode
Enhancement
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IPZ40N04S58R4ATMA1 Description

IPZ40N04S58R4ATMA1 Description

The IPZ40N04S58R4ATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for automotive applications. It features a 40V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of 40A at 25°C. The device is mounted on a surface mount package and is available in a Tape & Reel (TR) format.

IPZ40N04S58R4ATMA1 Features

  • Input Capacitance (Ciss): The maximum input capacitance is 771 pF at 25 V, ensuring fast switching speeds.
  • Gate Charge (Qg): The maximum gate charge is 13.7 nC at 10 V, contributing to low power consumption and efficient operation.
  • Power Dissipation: The maximum power dissipation is 34W (Tc), allowing the device to handle high power applications.
  • Technology: The device uses MOSFET (Metal Oxide) technology, providing excellent performance and reliability.
  • REACH Status: The IPZ40N04S58R4ATMA1 is REACH Unaffected, ensuring compliance with European chemical regulations.
  • RoHS Status: The device is ROHS3 Compliant, adhering to environmental protection standards.
  • Moisture Sensitivity Level (MSL): The MSL is 1 (Unlimited), indicating that the device is not sensitive to moisture and can be stored for an extended period without degrading.
  • Grade: The IPZ40N04S58R4ATMA1 is designed for automotive applications, making it suitable for use in harsh environments.
  • Rds On (Max): The maximum on-resistance is 8.4mOhm at 20A and 10V, providing low power loss and high efficiency.
  • Vgs(th) (Max): The maximum threshold voltage is 3.4V at 10µA, ensuring reliable operation across a wide range of input voltages.

IPZ40N04S58R4ATMA1 Applications

The IPZ40N04S58R4ATMA1 is ideal for a variety of automotive applications, including:

  • Power Management: The device's high power dissipation and low on-resistance make it suitable for power management systems in vehicles.
  • Motor Control: The IPZ40N04S58R4ATMA1 can be used in motor control applications, such as electric window lifts and seat adjustments.
  • LED Lighting: The device's low on-resistance and high current handling capabilities make it suitable for LED lighting systems in vehicles.

Conclusion of IPZ40N04S58R4ATMA1

The IPZ40N04S58R4ATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, offering excellent technical specifications and performance benefits for automotive applications. Its low on-resistance, high power dissipation, and compliance with environmental regulations make it an ideal choice for power management, motor control, and LED lighting systems in vehicles. With its unique features and advantages over similar models, the IPZ40N04S58R4ATMA1 is a reliable and efficient solution for demanding automotive applications.

FAQ

What operating temperature range does IPZ40N04S58R4ATMA1 support?
IPZ40N04S58R4ATMA1 has an operating temperature range of -55°C ~ 175°C (TJ).
What package or case is IPZ40N04S58R4ATMA1 available in?
What is the standard lead time for IPZ40N04S58R4ATMA1?
What voltage specification is listed for IPZ40N04S58R4ATMA1?
Are there related or alternative parts for IPZ40N04S58R4ATMA1?
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