


Infineon Technologies
IR2011S
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
IR2011S Description
IR2011S Description
The IR2011S from Infineon Technologies is a high-performance dual-channel gate driver IC designed for driving both high-side and low-side MOSFETs or IGBTs in power electronics applications. Housed in an 8-pin SOIC package, this surface-mount device operates within a 10V to 20V supply range, making it suitable for medium-voltage systems. Although now obsolete, its robust design ensures reliable switching performance with 35ns rise and 20ns fall times, enabling efficient high-frequency operation. The IR2011S features independent channels with inverting inputs, supporting precise control of power switches. With a peak output current of 1A (source/sink), it delivers strong drive capability for fast switching transitions.
IR2011S Features
- Dual-Channel Design: Independent high-side and low-side drivers for flexible half-bridge configurations.
- High Voltage Tolerance: Supports bootstrap operation up to 200V, ideal for high-side driving.
- Fast Switching: 35ns rise / 20ns fall times minimize switching losses in high-frequency applications.
- Wide Supply Range: 10V–20V operation accommodates diverse system requirements.
- Robust Input Compatibility: 0.7V (VIL) / 2.2V (VIH) logic thresholds ensure reliable interfacing with microcontrollers or PWM controllers.
- Surface-Mount Package: 8-SOIC for compact PCB integration.
IR2011S Applications
The IR2011S excels in motor drives, switch-mode power supplies (SMPS), and DC-DC converters, where efficient high-side/low-side switching is critical. Its fast transient response makes it ideal for PWM-controlled inverters and solar power systems. The high bootstrap voltage capability suits industrial motor controllers and automotive power modules. Despite its obsolete status, legacy designs benefit from its low propagation delay and 1A drive strength, ensuring minimal cross-conduction in half-bridge topologies.
Conclusion of IR2011S
While the IR2011S is no longer in production, its performance metrics—such as fast switching, dual-channel isolation, and high-voltage tolerance—remain competitive for legacy systems. Engineers seeking replacements should consider modern alternatives with similar specifications but improved availability. For existing designs, the IR2011S continues to offer reliable gate driving in demanding power electronics applications.



.png)


















.png?x-oss-process=image/format,webp/resize,h_32)










