Infineon Technologies_IR2107S
Infineon Technologies_IR2107S
original

Infineon Technologies
IR2107S

730-IR2107S
PDF Datasheet
IC GATE DRVR HALF-BRIDGE 8SOIC

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Tech Specifications

Rise / Fall Time (Typ)
150ns, 50ns
Gate Type
IGBT, N-Channel MOSFET
Product Status
Obsolete
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Voltage - Supply
10V ~ 20V
REACH Status
REACH Unaffected
Mfr
Infineon Technologies
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IR2107S Description

IR2107S Description

The IR2107S is a high-performance gate driver IC designed for half-bridge configurations, manufactured by Infineon Technologies. This integrated circuit is part of the obsolete product line but remains a reliable for choice various power electronics applications. The IR2107S features independent high and low-side channels, making it suitable for driving power MOSFETs and IGBTs in a wide range of voltage levels from 10V to 20V. The device operates with a logic voltage range of 0.8V to 2.7V, ensuring compatibility with various control systems. It supports a maximum high-side voltage of 600V, making it ideal for high-voltage applications. The IR2107S is packaged in an 8SOIC tube format, suitable for surface-mount applications and has a moisture sensitivity level of 1 (unlimited), ensuring robustness in various environmental conditions.

IR2107S Features

  • Independent Channel Type: The IR2107S features independent high and low-side channels, allowing for precise control of power switches in half-bridge configurations.
  • Wide Supply Voltage Range: The device operates within a supply voltage range of 10V to 20V, providing flexibility in power supply design.
  • High-Side Voltage Capability: With a maximum high-side voltage of 600V, the IR2107S is well-suited for high-voltage applications, ensuring reliable operation in demanding environments.
  • Fast Rise and Fall Times: The IR2107S offers typical rise and fall times of 150ns and 50ns, respectively, enabling rapid switching and minimizing switching losses.
  • Peak Output Current: The device can source up to 200mA and sink up to 350mA, providing robust current handling capabilities for driving power switches.
  • Inverting Input Type: The inverting input type simplifies the control circuitry, reducing the complexity of the overall system design.
  • REACH Compliance: The IR2107S is REACH unaffected, ensuring compliance with environmental regulations and suitability for global markets.

IR2107S Applications

The IR2107S is ideal for a variety of applications where high-voltage gate driving is required. Some specific use cases include:

  • Power Supplies: The IR2107S is well-suited for driving power MOSFETs and IGBTs in DC-DC converters, inverters, and other power supply applications, ensuring efficient power conversion and control.
  • Motor Drives: In motor control applications, the IR2107S can drive the power switches in half-bridge configurations, providing precise control of motor speed and torque.
  • Renewable Energy Systems: The device's high-voltage capability makes it suitable for driving power switches in solar inverters and other renewable energy systems, contributing to efficient energy conversion and management.
  • Industrial Automation: The IR2107S can be used in various industrial automation applications, such as driving power switches in servo drives and other motor control systems, ensuring reliable operation and control.

Conclusion of IR2107S

The IR2107S gate driver IC from Infineon Technologies is a robust and versatile solution for high-voltage gate driving applications. Its independent channel design, wide supply voltage range, and high-side voltage capability make it suitable for a variety of power electronics applications. The fast rise and fall times, along with its peak output current capabilities, ensure efficient switching and reliable operation. Despite being an obsolete product, the IR2107S remains a reliable choice for engineers and designers looking for a high-performance gate driver solution. Its compliance with REACH regulations and moisture sensitivity level of 1 (unlimited) further enhance its suitability for global markets and various environmental conditions.

FAQ

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