Infineon Technologies_IR2112PBF
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Infineon Technologies
IR2112PBF

730-IR2112PBF
PDF Datasheet
IC GATE DRVR HI/LOW SIDE 14DIP
20 weeks

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ISO14001
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Tech Specifications

Maximum Turn-On Delay Time (ns)
30
PPAP
No
Gate Type
IGBT, N-Channel MOSFET
Product Status
Not For New Designs
Automotive
No
Special Features
Under Voltage Lockout
Supplier Package
PDIP
Package / Case
14-DIP (0.300", 7.62mm)
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IR2112PBF Description

IR2112PBF Description

The IR2112PBF is a high-performance gate driver IC from Infineon Technologies, designed to drive high and low side MOSFETs in a variety of power electronics applications. With a supply voltage range of 10V to 20V, this device is well-suited for demanding power conversion tasks. The IR2112PBF features a unique independent channel design, allowing for flexible control of both high and low side MOSFETs. The device is packaged in a 14-DIP tube, making it suitable for through-hole mounting in various circuit designs.

IR2112PBF Features

  • Supply Voltage Range: 10V to 20V, providing flexibility in power supply selection.
  • Independent Channel Design: Allows for separate control of high and low side MOSFETs, enhancing system performance and reliability.
  • High Side Voltage - Max (Bootstrap): 600V, enabling the device to handle high voltage applications.
  • Logic Voltage - VIL, VIH: 6V and 9.5V, respectively, ensuring robust signal integrity.
  • Current - Peak Output (Source, Sink): 250mA and 500mA, respectively, providing ample drive capability for various MOSFETs.
  • Rise / Fall Time (Typ): 80ns and 40ns, respectively, enabling fast switching performance.
  • Number of Drivers: 2, allowing for control of two MOSFETs simultaneously.
  • Mounting Type: Through Hole, facilitating easy integration into existing circuit designs.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating that the device is not sensitive to moisture and can be stored and handled without special precautions.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards for hazardous substances.

IR2112PBF Applications

The IR2112PBF is ideal for a variety of power electronics applications, including:

  • Motor Control: Driving high and low side MOSFETs in brushless DC motor controllers.
  • Power Supplies: Controlling MOSFETs in switch-mode power supplies and converters.
  • Industrial Automation: Driving MOSFETs in high-voltage motor drives and control systems.
  • Renewable Energy: Driving MOSFETs in solar inverters and wind power conversion systems.

Conclusion of IR2112PBF

The IR2112PBF from Infineon Technologies is a versatile and high-performance gate driver IC, offering unique features such as independent channel design and a wide supply voltage range. Its robust performance specifications, including fast rise and fall times, make it an excellent choice for demanding power electronics applications. While the product is marked as "Not For New Designs," it remains a reliable option for existing designs and applications where its specific features are required.

FAQ

Is IR2112PBF currently in stock?
Yes. IR2112PBF currently shows 862 unit(s) in stock.
What operating temperature range does IR2112PBF support?
What voltage specification is listed for IR2112PBF?
Are there related or alternative parts for IR2112PBF?
Does IR2112PBF have quantity-based pricing?
Availability (In Stock : 862 )
Quantity Unit Price Ext. Price
1+ $3.80160 $3.80
10+ $2.88112 $28.81
25+ $2.65091 $66.27
100+ $2.39800 $239.80
250+ $2.27751 $569.38
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