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IR2113

IR2113 Description

The IR2113 from Infineon Technologies is a high-voltage, high-speed half-bridge gate driver IC designed for power MOSFET and IGBT applications. Housed in a 14-pin DIP (Through Hole) package, it features independent high- and low-side driver channels with a 600V maximum bootstrap voltage, making it suitable for high-power switching circuits. Operating from 3.3V to 20V, it delivers peak output currents of 2A (source/sink) and boasts fast switching with 25ns rise and 17ns fall times (typical). Although marked obsolete, it remains a robust choice for legacy designs requiring reliable high-voltage isolation and efficient gate driving.

IR2113 Features

• High-Side Voltage Support: Up to 600V bootstrap voltage for driving high-side MOSFETs/IGBTs.
• Fast Switching: Low 25ns/17ns rise/fall times minimize switching losses.
• Dual Independent Channels: Enables flexible half-bridge or synchronous buck configurations.
• Wide Logic Voltage Range: Compatible with 6V (VIL) and 9.5V (VIH) logic levels.
• High Current Drive: 2A peak output current ensures quick gate charge/discharge.
• Robust Packaging: Through-hole 14DIP for easy prototyping and industrial use.
• REACH Unaffected: Compliant with environmental regulations.

IR2113 Applications

• Motor Drives: Ideal for 3-phase inverters in industrial motor control.
• Switching Power Supplies: Used in high-voltage DC-DC converters and SMPS designs.
• Half-Bridge Topologies: Suitable for UPS systems, solar inverters, and welding equipment.
• Legacy Systems: Maintains compatibility with older high-voltage designs requiring DIP packaging.

Conclusion of IR2113

The IR2113 excels in high-voltage, high-speed switching applications, offering low propagation delays and strong gate drive capability. While obsolete, its 600V isolation, dual-channel design, and through-hole package make it a dependable choice for engineers maintaining or designing industrial power systems. For new designs, consider modern alternatives, but the IR2113 remains a proven solution for demanding high-voltage environments.