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IR2113STR

IR2113STR Description

The IR2113STR from Infineon Technologies is a high-voltage, high-speed gate driver IC designed for half-bridge and other power switching applications. This surface-mount (SOIC-16) device integrates two independent drivers (high-side and low-side) with a 600V bootstrap capability, enabling efficient control of MOSFETs and IGBTs. Operating from 3.3V to 20V, it delivers peak output currents of 2A (source/sink) and features fast switching characteristics (25ns rise, 17ns fall times), minimizing power losses in high-frequency circuits. Though marked obsolete, its robust design remains relevant for legacy systems requiring reliable high-voltage isolation and compact driver solutions.

IR2113STR Features

• High-Side Voltage Rating: Supports up to 600V, ideal for high-voltage applications.
• Fast Switching: 25ns rise / 17ns fall times enhance efficiency in high-frequency designs.
• Dual Independent Drivers: Enables flexible half-bridge or full-bridge configurations.
• Wide Logic Supply Range: 3.3V–20V compatibility simplifies interfacing with microcontrollers or DSPs.
• High Current Drive: 2A peak output current ensures robust gate charging/discharging.
• Surface-Mount Package (SOIC-16): Compact footprint suits space-constrained PCB layouts.
• REACH Unaffected: Compliant with environmental regulations.

IR2113STR Applications

• Motor Drives: Efficiently controls IGBTs/MOSFETs in BLDC and stepper motor systems.
• Switched-Mode Power Supplies (SMPS): Optimizes performance in high-voltage DC-DC converters.
• Inverters: Critical for solar inverters and UPS systems requiring high-side switching.
• Industrial Power Systems: Used in PLC-based automation and welding equipment.
• Legacy System Maintenance: Suitable for repairing/upgrading obsolete designs due to its proven reliability.

Conclusion of IR2113STR

The IR2113STR excels in high-voltage, high-speed switching applications, offering low propagation delays, robust current drive, and compact packaging. While discontinued, its 600V isolation, dual-driver architecture, and wide voltage range make it a pragmatic choice for legacy industrial and power electronics designs. Engineers valuing reliability and performance in half-bridge configurations may still find this IC advantageous for specific use cases.