Infineon Technologies_IR2118STRPBF
original

Infineon Technologies
IR2118STRPBF

730-IR2118STRPBF
PDF Datasheet
IC GATE DRVR HIGH-SIDE 8SOIC
20 Weeks

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ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

PPAP
No
Gate Type
IGBT, N-Channel MOSFET
Product Status
Active
Automotive
No
Special Features
Under Voltage Lockout
Supplier Package
SOIC N
Package / Case
8-SOIC (0.154", 3.90mm Width)
Voltage - Supply
10V ~ 20V
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IR2118STRPBF Description

IR2118STRPBF Description

The IR2118STRPBF is a high-performance gate driver IC designed and manufactured by Infineon Technologies. This device is specifically engineered for high-side gate driving applications, offering robust performance and reliability in various electronic systems. With its active product status and REACH unaffected status, the IR2118STRPBF ensures compliance with environmental regulations while maintaining high-quality performance.

IR2118STRPBF Features

  • Voltage - Supply: The IR2118STRPBF operates within a wide voltage range of 10V to 20V, providing flexibility in various power supply configurations.
  • Rise/Fall Time (Typ): This device boasts a fast rise time of 40ns and a fall time of 80ns, enabling efficient high-speed switching in demanding applications.
  • Logic Voltage - VIL, VIH: The IR2118STRPBF features a logic voltage of 6V for VIL and 9.5V for VIH, ensuring reliable signal integrity and compatibility with various logic families.
  • Current - Peak Output (Source, Sink): This gate driver IC can source up to 250mA and sink up to 500mA, providing ample current for driving high-power applications.
  • High Side Voltage - Max (Bootstrap): The IR2118STRPBF can handle a maximum high-side voltage of 600V, making it suitable for high-voltage applications.
  • Mounting Type: This device is surface mount, allowing for compact and efficient integration into PCB designs.
  • Package: The IR2118STRPBF is available in an 8-SOIC package, providing a compact and robust solution for space-constrained applications.
  • Number of Drivers: This gate driver IC features a single driver channel, simplifying design and reducing component count in applications requiring a single high-side driver.

IR2118STRPBF Applications

The IR2118STRPBF is ideal for a wide range of applications where high-side gate driving is required. Some specific use cases include:

  1. Power Electronics: In power conversion systems, such as AC/DC and DC/DC converters, the IR2118STRPBF can efficiently drive high-power MOSFETs and IGBTs.
  2. Industrial Automation: This gate driver IC can be used in motor control applications, providing precise and reliable control of high-voltage motor drivers.
  3. Renewable Energy: In solar inverters and wind energy systems, the IR2118STRPBF can drive high-voltage switches, ensuring efficient energy conversion and distribution.
  4. Electric Vehicles (EVs): This device can be used in EV charging systems and powertrain control, providing high-reliability gate driving for high-voltage components.

Conclusion of IR2118STRPBF

The IR2118STRPBF from Infineon Technologies is a versatile and high-performance gate driver IC designed for high-side gate driving applications. Its wide voltage range, fast rise/fall times, and high current capabilities make it an ideal choice for demanding power electronics, industrial automation, renewable energy, and electric vehicle applications. With its compact 8-SOIC package and surface mount design, the IR2118STRPBF offers a reliable and efficient solution for space-constrained designs.

FAQ

Are there related or alternative parts for IR2118STRPBF?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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Availability (In Stock : 1599 )
Quantity Unit Price Ext. Price
1+ $1.74240 $1.74
10+ $1.28744 $12.87
25+ $1.17251 $29.31
100+ $1.04632 $104.63
250+ $0.98620 $246.55
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