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IRF1010ZPBF

IRF1010ZPBF Description

The IRF1010ZPBF is a high-performance MOSFET (Metal Oxide) manufactured by Infineon Technologies. It features a drain-to-source voltage (Vdss) of 55V, a continuous drain current (Id) of 75A at 25°C, and a power dissipation (Max) of 140W (Tc). The device has an input capacitance (Ciss) of 2840 pF at 25V and a gate charge (Qg) of 95 nC at 10V. The IRF1010ZPBF operates with a gate-source voltage (Vgs) of ±20V and has a threshold voltage (Vgs(th)) of 4V at 250µA.

IRF1010ZPBF Features

• Technology: MOSFET (Metal Oxide)
• Series: HEXFET®
• Mounting Type: Through Hole
• Package: Tube
• Base Product Number: IRF1010
• Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• REACH Status: REACH Unaffected
• RoHS Status: ROHS3 Compliant
• ECCN: EAR99
• HTSUS: 8541.29.0095

IRF1010ZPBF Applications

The IRF1010ZPBF is ideal for applications requiring high power and voltage handling capabilities. Some specific use cases include:

1. Power Electronics: Due to its high drain current and voltage ratings, the IRF1010ZPBF is suitable for power electronics applications, such as power supplies and motor control systems.
2. Industrial Automation: The device's robust performance makes it suitable for industrial automation applications, where high power and voltage ratings are required.
3. Automotive Electronics: The IRF1010ZPBF can be used in automotive electronics, such as electric vehicle charging systems and power management systems.

Conclusion of IRF1010ZPBF

The IRF1010ZPBF is a high-performance MOSFET from Infineon Technologies, offering excellent power and voltage handling capabilities. Its unique features, such as low Rds On and high input capacitance, make it an ideal choice for power electronics, industrial automation, and automotive electronics applications. However, it is important to note that the product is now obsolete, and alternative models should be considered for new designs.