Infineon Technologies_IRF1310NSTRLPBF
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Infineon Technologies
IRF1310NSTRLPBF

278-IRF1310NSTRLPBF
PDF Datasheet
MOSFET N-CH 100V 42A D2PAK
10 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
45
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Typical Rise Time (ns)
56
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
11
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IRF1310NSTRLPBF Description

IRF1310NSTRLPBF Description

The IRF1310NSTRLPBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring robust power handling and efficient switching capabilities. This device features a D2PAK package, which is ideal for surface-mount applications in power electronics. With a drain-source voltage rating of 100V and a continuous drain current of 42A at 25°C, the IRF1310NSTRLPBF is well-suited for a wide range of power management tasks.

IRF1310NSTRLPBF Features

  • Technology: MOSFET (Metal Oxide), ensuring high efficiency and low power loss.
  • Drain to Source Voltage (Vdss): 100V, suitable for medium voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 42A, providing ample current handling capability.
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V, ensuring low on-resistance for efficient power delivery.
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10V, contributing to fast switching speeds.
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V, minimizing capacitive effects.
  • Vgs (Max): ±20V, allowing for a wide gate voltage range.
  • Vgs(th) (Max) @ Id: 4V @ 250µA, ensuring reliable threshold voltage performance.
  • Series: HEXFET®, known for its high performance and reliability.
  • Mounting Type: Surface Mount, facilitating easy integration into PCB designs.
  • Power Dissipation (Max): 3.8W (Ta), 160W (Tc), enabling operation in high-power applications.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring long-term reliability in various environments.

IRF1310NSTRLPBF Applications

The IRF1310NSTRLPBF is ideal for applications where high power handling, efficiency, and reliability are paramount. Some specific use cases include:

  • Power Supplies: Due to its high current and voltage ratings, the IRF1310NSTRLPBF is perfect for power supply designs, especially in industrial and automotive applications.
  • Motor Controls: Its low on-resistance and fast switching capabilities make it suitable for motor control applications, providing efficient power management and precise control.
  • Automotive Electronics: The device's high power dissipation and robust construction make it an excellent choice for automotive electronics, such as inverter systems and battery management.

Conclusion of IRF1310NSTRLPBF

The IRF1310NSTRLPBF from Infineon Technologies is a versatile and powerful N-Channel MOSFET, offering a combination of high current and voltage ratings, low on-resistance, and fast switching speeds. Its unique features, such as the HEXFET® series designation and D2PAK package, make it an ideal choice for a wide range of power electronics applications, including power supplies, motor controls, and automotive electronics. With its robust performance and reliable operation, the IRF1310NSTRLPBF is a trusted component for demanding power management tasks.

FAQ

What is the mounting type of IRF1310NSTRLPBF?
IRF1310NSTRLPBF uses a Surface Mount mounting style based on the listed product specifications.
What is IRF1310NSTRLPBF?
What operating temperature range does IRF1310NSTRLPBF support?
Is IRF1310NSTRLPBF currently in stock?
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