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IRF1405S

IRF1405S Description

The IRF1405S is a N-Channel MOSFET manufactured by Infineon Technologies. This device is part of the HEXFET® series and is designed for high-power applications. It features a D2PAK package, making it suitable for surface mount applications. The IRF1405S has a drain-to-source voltage (Vdss) of 55V and can handle a continuous drain current (Id) of 131A at 25°C. The device has a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. The maximum on-state resistance (Rds On) is 5.3mOhm at 101A and 10V Vgs.

IRF1405S Features

• N-Channel MOSFET with HEXFET® technology
• 55V drain-to-source voltage (Vdss)
• 131A continuous drain current (Id) at 25°C
• ±20V maximum gate-source voltage (Vgs)
• 4V threshold voltage (Vgs(th)) at 250µA
• 5.3mOhm maximum on-state resistance (Rds On) at 101A and 10V Vgs
• D2PAK package for surface mount applications
• 200W maximum power dissipation (Tc)
• REACH unaffected status
• Moisture sensitivity level (MSL) 1 (unlimited)
• EAR99 ECCN

IRF1405S Applications

The IRF1405S is ideal for high-power applications that require efficient switching and low on-state resistance. Some specific use cases include:

1. Power supplies and converters
2. Motor control and drives
3. High-current switching applications
4. Industrial and automotive electronics

Conclusion of IRF1405S

The IRF1405S is a high-performance N-Channel MOSFET from Infineon Technologies, offering excellent switching capabilities and low on-state resistance. Its HEXFET® technology, combined with a robust D2PAK package, makes it suitable for a wide range of high-power applications. While the device is now considered obsolete, it remains a reliable choice for existing designs that require its specific performance characteristics.