Infineon Technologies_IRF200P222
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Infineon Technologies
IRF200P222

278-IRF200P222
PDF Datasheet
MOSFET N-CH 200V 182A TO247AC
20 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
77
Input Capacitance (Ciss) (Max) @ Vds
9820 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
203 nC @ 10 V
Typical Rise Time (ns)
96
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
25
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IRF200P222 Description

IRF200P222 Description

The IRF200P222 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring robust power handling and efficient switching. This device is part of the StrongIRFET™ series and is housed in a TO247AC package, making it suitable for a wide range of power electronics applications.

IRF200P222 Features

  • High Drain-to-Source Voltage (Vdss): The IRF200P222 can handle a maximum drain-to-source voltage of 200V, making it ideal for high-voltage applications.
  • High Continuous Drain Current (Id): With a continuous drain current rating of 182A at 25°C, this MOSFET can handle significant power loads.
  • Low On-Resistance (Rds On): The maximum on-resistance at 82A and 10V Vgs is just 6.6mOhm, ensuring efficient power transfer with minimal losses.
  • Low Gate Charge (Qg): A maximum gate charge of 203nC @ 10V Vgs contributes to fast switching and reduced power dissipation.
  • Robust Input Capacitance (Ciss): The maximum input capacitance of 9820pF @ 50V Vds ensures stable operation under varying input conditions.
  • Compliance with Industry Standards: The IRF200P222 is compliant with REACH and RoHS3 standards, making it suitable for environmentally conscious designs.
  • Moisture Sensitivity Level (MSL): With an MSL of 1, this device can be stored for extended periods without the need for special precautions.

IRF200P222 Applications

The IRF200P222 is well-suited for a variety of applications where high power handling and efficient switching are critical:

  • Power Supplies: Due to its high voltage and current ratings, the IRF200P222 is ideal for use in power supply designs.
  • Industrial Automation: This MOSFET can be used in motor control applications, providing precise and efficient power management.
  • Automotive Electronics: The IRF200P222 can be employed in automotive systems that require high power and robust performance.
  • Renewable Energy Systems: In solar inverters and wind power systems, this MOSFET can help manage the high power demands efficiently.

Conclusion of IRF200P222

The IRF200P222 from Infineon Technologies stands out for its high power handling capabilities, low on-resistance, and fast switching characteristics. Its compliance with industry standards and robust performance make it an excellent choice for demanding power electronics applications. With its unique features, the IRF200P222 offers a competitive advantage over similar models, providing reliable and efficient performance in a variety of high-power applications.

FAQ

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