Infineon Technologies_IRF3205Z
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Infineon Technologies
IRF3205Z

278-IRF3205Z
PDF Datasheet
MOSFET N-CH 55V 75A TO220AB

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
TO-220AB
Drain to Source Voltage (Vdss)
55 V
Power Dissipation (Max)
170W (Tc)
Package / Case
TO-220-3
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IRF3205Z Description

IRF3205Z Description

The IRF3205Z from Infineon Technologies is an N-channel power MOSFET designed for high-efficiency switching applications. With a 55V drain-to-source voltage (Vdss) and 75A continuous drain current (Id), it delivers robust performance in power management circuits. This HEXFET® series MOSFET features a low on-resistance (Rds(on)) of 6.5mΩ at 66A and 10V gate drive, minimizing conduction losses. Its 3450pF input capacitance (Ciss) and 110nC total gate charge (Qg) ensure fast switching, making it suitable for high-frequency applications. Though marked as obsolete, its legacy design remains relevant for industrial and automotive systems requiring high current handling and thermal stability.

IRF3205Z Features

  • Low Rds(on): 6.5mΩ @ 10V Vgs enhances efficiency in high-current paths.
  • High Power Handling: 170W (Tc) dissipation capability with TO-220AB packaging for effective heat management.
  • Wide Vgs Range: ±20V gate-source voltage tolerance for flexible drive circuitry.
  • Fast Switching: Optimized gate charge (110nC) reduces switching losses in PWM applications.
  • Industrial Robustness: REACH unaffected and MSL 1 (unlimited) rated for reliability in harsh environments.

IRF3205Z Applications

  • DC-DC Converters: Efficient power conversion in telecom and server PSUs.
  • Motor Drives: High-current switching in automotive and industrial motor controllers.
  • Battery Management Systems (BMS): Low-loss switching for Li-ion protection circuits.
  • Inverters: Solar and UPS systems leveraging its high Vdss and thermal performance.
  • Legacy Designs: Cost-effective replacement in existing TO-220AB-based layouts.

Conclusion of IRF3205Z

The IRF3205Z balances high current capability, low conduction losses, and thermal resilience, making it a historical benchmark in power MOSFETs. While obsolete, its TO-220AB package and Infineon’s HEXFET® technology ensure enduring utility in high-power switching designs. Engineers favor it for its proven reliability in motor drives, inverters, and energy systems where efficiency and durability are critical.

FAQ

What is IRF3205Z?
IRF3205Z is a Single FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
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