Infineon Technologies_IRF3205ZS
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Infineon Technologies
IRF3205ZS

278-IRF3205ZS
PDF Datasheet
MOSFET N-CH 55V 75A D2PAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
D2PAK
Drain to Source Voltage (Vdss)
55 V
Power Dissipation (Max)
170W (Tc)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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IRF3205ZS Description

IRF3205ZS Description

The IRF3205ZS from Infineon Technologies is an N-channel power MOSFET designed for high-efficiency switching applications. With a 55V drain-to-source voltage (Vdss) and 75A continuous drain current (Id), it delivers robust performance in power management circuits. This HEXFET® series MOSFET features a low on-resistance (Rds(on)) of 6.5mΩ at 66A and 10V gate drive, minimizing conduction losses. Its 3450pF input capacitance (Ciss) and 110nC total gate charge (Qg) ensure fast switching, making it suitable for high-frequency applications. Packaged in a D2PAK (TO-263) surface-mount form factor, it balances thermal performance with board space efficiency.

IRF3205ZS Features

  • High Current Handling: Supports 75A (Tc) continuous current, ideal for high-power designs.
  • Low Rds(on): 6.5mΩ @ 10V Vgs reduces power dissipation and improves efficiency.
  • Fast Switching: Optimized gate charge (110nC @ 10V) and capacitance for rapid transitions.
  • Robust Voltage Rating: 55V Vdss ensures reliability in automotive, industrial, and telecom applications.
  • Thermal Efficiency: 170W (Tc) power dissipation capability with D2PAK’s superior thermal conductivity.
  • Wide Vgs Range: ±20V gate-source voltage tolerance enhances design flexibility.

IRF3205ZS Applications

This MOSFET excels in:

  • DC-DC Converters: High-efficiency buck/boost circuits due to low Rds(on) and fast switching.
  • Motor Drives: Handles high current in H-bridge configurations for robotics and EVs.
  • Power Supplies: Used in SMPS designs for servers, telecom infrastructure, and industrial equipment.
  • Automotive Systems: Suitable for load switches, battery management, and LED drivers.
  • Solar Inverters: Efficient energy conversion with minimal losses.

Conclusion of IRF3205ZS

The IRF3205ZS is a high-performance N-channel MOSFET offering a balance of low conduction loss, fast switching, and thermal robustness. While marked as obsolete, its proven reliability in high-current, high-voltage applications makes it a legacy choice for engineers needing durable power solutions. Its D2PAK package ensures easy integration into space-constrained designs, though newer alternatives may offer further optimizations. Ideal for industrial, automotive, and power electronics where efficiency and thermal management are critical.

FAQ

What is the mounting type of IRF3205ZS?
IRF3205ZS uses a Surface Mount mounting style based on the listed product specifications.
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